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参数资料
| 型号： | HCTS00HMSR |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 通用总线功能 |
| 英文描述： | Radiation Hardened Quad 2-Input NAND Gate |
| 中文描述： | HCT SERIES, QUAD 2-INPUT NAND GATE, UUC14 |
| 文件页数： | 3/9页 |
| 文件大小： | 49K |
| 代理商： | HCTS00HMSR |
372
Specifications HCTS00MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Yn
TPHL
VCC = 4.5V
9
+25
o
C
2
18
ns
VCC = 4.5V
10, 11
+125
o
C, -55
o
C
2
20
ns
Input to Yn
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
VCC = 4.5V
10, 11
+125
o
C, -55
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
38
pF
1
+125
o
C, -55
o
C
-
72
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics..
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.80V, IOL = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
±
5
μ
A
Noise Immunity
Functional Test
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.80V, (Note 3)
+25
o
C
-
-
-
Input to Yn
TPHL
VCC = 4.5V
+25
o
C
2
20
ns
TPLH
VCC = 4.5V
+25
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
518774
相关PDF资料 |
PDF描述 |
|---|---|
| HCTS00DMSR | Radiation Hardened Quad 2-Input NAND Gate |
| HCTS00K | Radiation Hardened Quad 2-Input NAND Gate |
| HCTS00KMSR | Radiation Hardened Quad 2-Input NAND Gate |
| HCTS00MS | Radiation Hardened Quad 2-Input NAND Gate |
| HCTS04HMSR | Radiation Hardened Hex Inverter |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HCTS00K | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NAND Gate |
| HCTS00KMSR | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NAND Gate |
| HCTS00MS | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NAND Gate |
| HCTS02D | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NOR Gate |
| HCTS02DMSR | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Radiation Hardened Quad 2-Input NOR Gate |
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