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参数资料
| 型号： | HDB107G |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Analog IC |
| 中文描述： | 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | DB-1, 4 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 98K |
| 代理商： | HDB107G |
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
NONINDUCTIVE
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.2- MAXIMUM FORWARD
CURRENT DERATING CURVE
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
P
1
2
5
10
20
100
50
10
0
15
20
30
25
35
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
JEDEC Method
FIG.4- TYPICAL FORWARD CHARACTERISTICS
I
.2
.4
.6
.8
1.0
1.2
1.4
0.001
0.01
0.1
1.0
10
FORWARD VOLTAGE. (V)
Tj=25 C
0
HB0GHB0G
HB0G
HDB106G~HDB107G
FIG.6- TYPICAL JUNCTION CAPACITANCE
J
.1
.5
1
5
2
10
20
50
100 200
500
10
0
20
30
40
50
60
70
REVERSE VOLTAGE. (V)
Tj=25 C
0
HDB101G~HDB105G
HDB106G~HDB107G
FIG.3- TYPICAL REVERSE CHARACTERISTICS
I
0
20
40
60
80
100
120
0.1
1.0
10
100
1000
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
0
Tj=125 C
0
A
20
40
60
80
100
120
140
150
0
0.5
1.0
AMBIENT TEMPERATURE. ( C)
o
60Hz RESISTIVE OR
INDUCTIVE LOAD
Copper Pauls
.51" x .51"
(13mm x 13mm)
.06" (1.5mm)
PCB
M C C
www.
mc c semi
.c om
HDB101G thru HDB107G
V ersion: 3 2003/01/30
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