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参数资料
| 型号： | HDBS107G |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts |
| 中文描述： | 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | SDB-1, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 121K |
| 代理商： | HDBS107G |
HDBS101G
THRU
HDBS107G
1.0 AMP. Glass
Passivated Bridge
High Efficient Rectifier
50 to 1000 Volts
Features
High Forward Surge Capability
Ideal for printed circuit boards
High Temperature Soldering: 250
o
C for 10 seconds
Reliable low cost construction utilizing molded plastic technique
Maximum Ratings
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
For Capacitive Load, Derate Current by 20%
MCC
Part Number
HDBS101G
HDBS102G
HDBS103G
HDBS104G
HDBS105G
HDBS106G
HDBS107G
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
HDBS101G-103G
HDBS104G
HDBS105G-107G
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
HDBS101G-104G
HDBS105G-107G
I
F(AV)
1.0 A
T
C
= 40
°
C
I
FSM
50A
V
F
1.0V
1.3V
1.7V
I
FM
= 1.0A;
T
C
= 25
°
C
I
R
5.0
μ
A
500uA
T
C
= 25
°
C
T
C
= 125
°
C
T
rr
50ns
75ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Suggested Solder Pad
Layout
DIMENSIONS
INCHES
MIN
.320
.245
MM
DIM
A
B
MAX
.335
.255
MIN
8.13
6.20
MAX
8.50
6.50
NOTE
C
D .386 .404 9.80
.040
.060
1.02
1.52
10.3
E
G .00
3
.0
13
0.0
76
0.
33
H
.195
.205
K
.040
.047
.120
.130
3.05
3.30
5.00
1.02
5.20
1.20
TYP
.047”
.060”
.205”
.344”
SDB-1
www.
mc c semi
.c om
8.3ms, half sine
T
J
=150
o
C
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
B
C
D
A
E
G
H
K
Notch in Case
+
～
-
～
V ersion: 3 2003/01/30
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