参数资料
| 型号： | HFA1113IB |
| 厂商： | Intersil |
| 文件页数： | 8/16页 |
| 文件大小： | 0K |
| 描述： | IC BUFFER 850MHZ 8-SOIC |
| 标准包装： | 98 |
| 放大器类型： | 缓冲器 |
| 电路数： | 1 |
| 转换速率： | 2400 V/µs |
| -3db带宽： | 850MHz |
| 电流 - 输入偏压： | 25µA |
| 电压 - 输入偏移： | 8000µV |
| 电流 - 电源： | 21mA |
| 电流 - 输出 / 通道： | 60mA |
| 电压 - 电源，单路/双路(±)： | 9 V ~ 11 V，±4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
16
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FN1342.6
July 11, 2005
Die Characteristics
DIE DIMENSIONS:
63 mils x 44 mils x 19 mils
1600
m x 1130m x 483m
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±0.4k
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
±0.8k
PASSIVATION:
Type: Nitride
Thickness: 4k
±0.5k
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (POWERED UP):
Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1113
NC
V-
VL
NC
OUT
+IN
-IN
VH
V+
HFA1113
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PDF描述 |
|---|---|
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| HFA1112IB | IC BUFFER 850MHZ 8-SOIC |
| 8-1879208-1 | RES 22.0K OHM 1/16W 0.1% 0402 |
| AS168X-CB1H030 | CIRCUIT BRKR THERMAL 3.0A 1POLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HFA1113IBZ | 功能描述:运算放大器 - 运放 W/ANNEAL BUFR 850MHZ CFB PRG-GAIN CLMP RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| HFA1113IBZ96 | 功能描述:运算放大器 - 运放 W/ANNEAL BUFR 850MHZ CFB PRG-GAIN CLMP RoHS:否 制造商:STMicroelectronics 通道数量:4 共模抑制比（最小值）:63 dB 输入补偿电压:1 mV 输入偏流（最大值）:10 pA 工作电源电压:2.7 V to 5.5 V 安装风格:SMD/SMT 封装 / 箱体:QFN-16 转换速度:0.89 V/us 关闭:No 输出电流:55 mA 最大工作温度:+ 125 C 封装:Reel |
| HFA1113IP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HFA1113MJ/883 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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