参数资料
型号: HFA1212IB
厂商: INTERSIL CORP
元件分类: 运动控制电子
英文描述: Dual 350MHz, Low Power Closed Loop Buffer Amplifier
中文描述: DUAL BUFFER AMPLIFIER, PDSO8
封装: PLASTIC, MS-012AA, SOIC-8
文件页数: 5/5页
文件大小: 36K
代理商: HFA1212IB
3-223
HFA1212/883
Die Characteristics
DIE DIMENSIONS:
69 x 92 x 19 mils
±
1 mils
1750 x 2330 x 483
μ
m
±
25.4
μ
m
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±
0.4k
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
±
0.8k
GLASSIVATION:
Type: Nitride
Thickness: 4k
±
0.5k
WORST CASE CURRENT DENSITY:
TBD
TRANSISTOR COUNT:
150
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1212/883
V-
OUT2
+IN1
-IN2
V+
OUT1
-IN1
NC
+IN2
NC
NC
NC
Spec Number
511111-883
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
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