参数资料
| 型号： | HFA1412IB |
| 厂商： | Intersil |
| 文件页数： | 5/13页 |
| 文件大小： | 0K |
| 描述： | IC BUFFER QUAD 350MHZ LP 14-SOIC |
| 标准包装： | 50 |
| 放大器类型： | 缓冲器 |
| 电路数： | 4 |
| 转换速率： | 1700 V/µs |
| -3db带宽： | 350MHz |
| 电流 - 输入偏压： | 1µA |
| 电压 - 输入偏移： | 2000µV |
| 电流 - 电源： | 5.9mA |
| 电流 - 输出 / 通道： | 55mA |
| 电压 - 电源，单路/双路(±)： | 9 V ~ 11 V，±4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 管件 |
13
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FN4152.4
January 23, 2006
Die Characteristics
DIE DIMENSIONS:
79 mils x 118 mils x 19 mils
2000
m x 3000m x 483m
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
±0.4k
Type: Metal 2: AICu(2%)
Thickness: Thickness: Metal 2: 16k
±0.8k
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
PASSIVATION:
Type: Nitride
Thickness: 4k
±0.5k
TRANSISTOR COUNT:
320
Metallization Mask Layout
HFA1412
V-
+IN1
V+
OUT1
OUT4
-IN1
-IN4
+IN4
+IN3
+IN2
-IN3
-IN2
OUT3
OUT2
V-
HFA1412
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| HFA1412IBZ | 功能描述:特殊用途放大器 W/ANNEAL BUFR 4X 350 MHZ PRG GAIN 14 IND RoHS:否 制造商:Texas Instruments 通道数量:Single 共模抑制比（最小值）: 输入补偿电压: 工作电源电压:3 V to 5.5 V 电源电流:5 mA 最大功率耗散: 最大工作温度:+ 70 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-20 封装:Reel |
| HFA1412IP | 功能描述:IC BUFFER QUAD 350MHZ LP 14-DIP RoHS:否 类别:集成电路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 标准包装:50 系列:LinCMOS™ 放大器类型:通用 电路数:4 输出类型:- 转换速率:0.05 V/µs 增益带宽积:110kHz -3db带宽:- 电流 - 输入偏压:0.7pA 电压 - 输入偏移:210µV 电流 - 电源:57µA 电流 - 输出 / 通道:30mA 电压 - 电源，单路/双路(±):3 V ~ 16 V，±1.5 V ~ 8 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:14-SOIC（0.154"，3.90mm 宽） 供应商设备封装:14-SOIC 包装:管件 产品目录页面:865 (CN2011-ZH PDF) 其它名称:296-1834296-1834-5 |
| HFA1412IPZ | 功能描述:特殊用途放大器 W/ANL BUFR 4X 350MHZ PRG GAIN IND RoHS:否 制造商:Texas Instruments 通道数量:Single 共模抑制比（最小值）: 输入补偿电压: 工作电源电压:3 V to 5.5 V 电源电流:5 mA 最大功率耗散: 最大工作温度:+ 70 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-20 封装:Reel |
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