- 您现在的位置：买卖IC网 > PDF目录18734 > HFA3101BZ (Intersil)IC TRANSISTOR ARRAY UHF 8-SOIC PDF资料下载
参数资料
| 型号： | HFA3101BZ |
| 厂商： | Intersil |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC TRANSISTOR ARRAY UHF 8-SOIC |
| 标准包装： | 98 |
| 频率： | 0Hz ~ 10GHz |
| 混频器数目： | 1 |
| 噪音数据： | 1.7dB |
| 包装： | 管件 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 产品目录页面： | 1246 (CN2011-ZH PDF) |
HFA3101
Absolute Maximum Ratings
Thermal Information
V CEO , Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V
Thermal Resistance (Typical, Note 1)
θ JA ( o C/W)
V CBO , Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V
V EBO , Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
I C , Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40 o C to 85 o C
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . .175 o C
Maximum Junction Temperature (Plastic Package) . . . . . . . . .150 o C
Maximum Storage Temperature Range . . . . . . . . . . -65 o C to 150 o C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300 o C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θ JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
T A = 25 o C
(NOTE 2)
TEST
PARAMETER
TEST CONDITIONS
LEVEL
MIN
TYP
MAX
UNITS
Collector to Base Breakdown Voltage, V (BR)CBO , Q 1 thru Q 6 I C = 100 μ A, I E = 0
A
12
18
-
V
Collector to Emitter Breakdown Voltage, V (BR)CEO ,
I C = 100 μ A, I B = 0
A
8
12
-
V
Q 5 and Q 6
Emitter to Base Breakdown Voltage, V (BR)EBO , Q 1 thru Q 6
Collector Cutoff Current, I CBO , Q 1 thru Q 4
Emitter Cutoff Current, I EBO , Q 5 and Q 6
DC Current Gain, h FE , Q 1 thru Q 6
I E = 10 μ A, I C = 0
V CB = 8V, I E = 0
V EB = 1V, I C = 0
I C = 10mA, V CE = 3V
A
A
A
A
5.5
-
-
40
6
0.1
-
70
-
10
200
-
V
nA
nA
Collector to Base Capacitance, C CB
Q 1 thru Q 4
V CB = 5V, f = 1MHz
C
-
0.300
-
pF
Q 5 and Q 6
-
0.600
-
pF
Emitter to Base Capacitance, C EB
Q 1 thru Q 4
V EB = 0, f = 1MHz
B
-
0.200
-
pF
Q 5 and Q 6
-
0.400
-
pF
Current Gain-Bandwidth Product, f T
Power Gain-Bandwidth Product, f MAX
Q 1 thru Q 4
Q 5 and Q 6
Q 1 thru Q 4
Q 5 and Q 6
I C = 10mA, V CE = 5V
I C = 20mA, V CE = 5V
I C = 10mA, V CE = 5V
I C = 20mA, V CE = 5V
C
C
C
C
-
-
-
-
10
10
5
5
-
-
-
-
GHz
GHz
GHz
GHz
Available Gain at Minimum Noise Figure, G NFMIN ,
Q 5 and Q 6
Minimum Noise Figure, NF MIN , Q 5 and Q 6
50 ? Noise Figure, NF 50 ? , Q 5 and Q 6
I C = 5mA,
V CE = 3V
I C = 5mA,
V CE = 3V
I C = 5mA,
V CE = 3V
f = 0.5GHz
f = 1.0GHz
f = 0.5GHz
f = 1.0GHz
f = 0.5GHz
f = 1.0GHz
C
C
C
C
C
C
-
-
-
-
-
-
17.5
11.9
1.7
2.0
2.25
2.5
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
DC Current Gain Matching, h FE1 /h FE2 , Q 1 and Q 2 ,
I C = 10mA, V CE = 3V
A
0.9
1.0
1.1
Q 3 and Q 4 , and Q 5 and Q 6
Input Offset Voltage, V OS , (Q 1 and Q 2 ), (Q 3 and Q 4 ),
I C = 10mA, V CE = 3V
A
-
1.5
5
mV
(Q 5 and Q 6 )
Input Offset Current, I C , (Q 1 and Q 2 ), (Q 3 and Q 4 ),
I C = 10mA, V CE = 3V
A
-
5
25
μ A
(Q 5 and Q 6 )
Input Offset Voltage TC, dV OS /dT, (Q1 and Q2, Q3 and Q 4 ,
I C = 10mA, V CE = 3V
C
-
0.5
-
μ V/ o C
Q 5 and Q 6 )
Collector to Collector Leakage, I TRENCH-LEAKAGE
? V TEST = 5V
B
-
0.01
-
nA
NOTE:
2. Test Level: A. Production Tested, B. Typical or Guaranteed Limit Based on Characterization, C. Design Typical for Information Only.
2
相关PDF资料 |
PDF描述 |
|---|---|
| CC-900W-CB5 | MODEM WIRELESS 900MHZ 5V MMCX |
| 710 | TEMPERATURE METER DUAL INPUT |
| 79696039 | PROBE ACCESS SLIDING CONN 6MM D |
| 0638512070 | TOOL KIT |
| 79696038 | PROBE ACCESS SLIDING CONN 3MM D |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HFA3101BZ | 制造商:Intersil Corporation 功能描述:TRANSISTOR ARRAY |
| HFA3101BZ | 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY GILBERT 制造商:Intersil Corporation 功能描述:IC TRANSISTOR ARRAY, GILBERT |
| HFA3101BZ96 | 功能描述:射频双极小信号晶体管 TXARRAY NPN GILBERT CELL 8W MILEL RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| HFA3102 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual Long-Tailed Pair Transistor Array |
| HFA3102_05 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Dual Long-Tailed Pair Transistor Array |
发布紧急采购，3分钟左右您将得到回复。