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参数资料
| 型号： | HFA3925IA |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 衰减器 |
| 英文描述： | null2.4GHz - 2.5GHz 250mW Power Amplifier |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件页数： | 4/9页 |
| 文件大小： | 95K |
| 代理商： | HFA3925IA |
2-182
17
V
G3
Negative bias control for the third PA stage, adjusted to set V
DD3
quiescent bias current, which is typically
90mA. Typical voltage at pin = -0.95V. Input impedance: > 1M
.
18
V
DD2
Positive bias for the second stage of the PA. 2.7V to 6V.
19-22
GND
DC and RF Ground.
23
V
DD3
Positive bias for the third stage of the PA. 2.7V to 6V.
24
GND
DC and RF Ground.
25
RF OUT
RF output of T/R switch and power amplifier for transmit mode.
26
T/R CTRL
0V for transmit mode, +5V for receive mode. Low < = 0.2V, high > = V
DD
-0.2V.
27
V
DD
TR
V
DD
for T/R switch.
28
GND
DC and RF Ground.
NOTE: Process variation will effect V
G3
voltage requirement to develop 90mA stage 3 quiescent current, maximum range = -0.69V to -1.04V.
Typical Performance Curves
Power Amplifier Small Signal Performance
NOTE: All data measured at T
A
= 25
o
C and V
G1
, V
G2
and V
G3
adjusted for first stage quies-
cent current of 20mA, second stage current of 53mA and third stage current of 90mA, respectively
FIGURE 1. LINEAR GAIN
FIGURE 2. INPUT MATCH
FIGURE 3. OUTPUT MATCH
Pin Description
(Continued)
PINS
SYMBOL
DESCRIPTION
6V
2.0
2.2
2.4
2.6
2.8
3.0
35
25
20
15
10
FREQUENCY (GHz)
G
30
V
DD1
= V
DD2
= V
DD3
5V
3V
4V
6V
2.0
2.2
2.4
2.6
2.8
3.0
-5
-15
-20
-25
-30
FREQUENCY (GHz)
R
-10
5V
3V
4V
6V
2.0
2.2
2.4
2.6
2.8
3.0
0
-5
-10
-15
-20
FREQUENCY (GHz)
R
5V
3V
4V
HFA3925
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