参数资料
型号: HFB32PA120C
厂商: International Rectifier
英文描述: Ultrafast, Soft Recovery Diode
中文描述: 超快,软恢复二极管
文件页数: 1/6页
文件大小: 114K
代理商: HFB32PA120C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
1200
16
190
64
151
60
Units
V
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
*
125°C
A
Bulletin PD -2.360 rev. B 05/01
Ultrafast Recovery
Ultrasoft Recovery
Very Low
I
RRM
Very Low
Q
rr
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Features
Description
International Rectifier's HFA32PA120C is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA32PA120C
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (I
RRM
) and does not
exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA32PA120C
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA32PA120C
Absolute Maximum Ratings (per Leg)
-55 to +150
W
°C
V
R
= 1200V
V
F
(typ.) = 2.3V
I
F(AV)
= 16A
Q
rr
(typ.)= 260nC
I
RRM
(typ.)
= 5.8A
t
rr
(typ.)
= 30ns
1
TO-247AC
per Leg
1
3
2
www.irf.com
相关PDF资料
PDF描述
HFA35HB60C Ultrafast, Soft Recovery Diode FRED
HFA3860BIV 3.3V 288-mc CPLD
HFA3860BIV96 nullDirect Sequence Spread Spectrum Baseband Processor
HFA3861BIN Direct Sequence Spread Spectrum Baseband Processor
HFA3861BIN96 Direct Sequence Spread Spectrum Baseband Processor
相关代理商/技术参数
参数描述
HFB32PA120CPBF 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Ultrafast Soft Recovery Diode, 2 x 16 A
HFB334N 制造商:Burndy 功能描述:3 X 3 Bar Tap
HFB33P1 制造商:Burndy 功能描述:3 X 3 BAR CLAMP
HFB35HB20 制造商:International Rectifier 功能描述:ULTRA FAST RECOVERY RECTFR 200V 35A 3PIN TO-254AA - Bulk
HFB35HB20C 制造商:International Rectifier 功能描述:Diode Switching 200V 35A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:ULTRA FAST RECOVERY RECTFR 200V 35A 3PIN TO-254AA - Bulk