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参数资料
| 型号： | HFB35HB20PBF |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 35 A, SILICON, RECTIFIER DIODE, TO-254AA |
| 封装： | HERMETIC SEALED PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 170K |
| 代理商： | HFB35HB20PBF |
07/26/06
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
Features
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFREDTM
VR = 200V
IF(AV) = 35A
trr = 35ns
HFB35HB20
www.irf.com
1
Parameter
Max.
Units
VR
Cathode to Anode Voltage
200
V
IF(AV)
Continuous Forward Current,
TC = 80°C
35
IFSM
Single Pulse Forward Current,
TC = 25°C
150
PD @ TC = 25°C
Maximum Power Dissipation
125
W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
A
Absolute Maximum Ratings
CASE STYLE
TO-254AA
ANODE
CATHODE
(ISOLATED BASE)
PD-94100A
Notes: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
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