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参数资料
| 型号： | HFT150-50 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-Channel Enhancement Mode HF POWER MOSFET |
| 中文描述： | HF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 0.500 INCH, FM-4 |
| 文件页数： | 1/1页 |
| 文件大小： | 30K |
| 代理商： | HFT150-50 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
V
(BR)DSS
I
D
= 50 mA
I
DSS
V
DSS
= 50 V
I
GSS
V
GS
= 20 V
V
GS(th)
V
DS
= 10 V
g
fs
V
DS
= 10 V
NONE
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
I
D
= 100 mA
I
D
= 5.0 A
MINIMUM TYPICAL MAXIMUM
125
UNITS
V
mA
m
A
V
S
5.0
1.0
5.0
1.0
3.5
C
iss
C
oss
C
rss
V
DS
= 50 V
V
GS
= 0 V f = 1.0 MHz
300
150
30
pF
G
ps
h
D
y
V
DD
= 50 V I
DQ
= 250 mA P
OUT
= 150W
(PEP)
F
O
= 30 & 30.001 MHz
VSWR 30:1 @ all phase angles
16
45
20
50
dB
%
HF POWER MOSFET
N-Channel Enhancement Mode
HFT150-50
DESCRIPTION:
The
HFT150-50
is Designed for
General Purpose Class B Power
Amplifier Applications Up to 100 MHz.
FEATURES:
P
G
= 20 dB Typ. at 150 W/30 MHz
h
D
= 50% Typical at 150 W/30 MHz
Omnigold
Metalization
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
16 A
125 V
±
30 V
300 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
0.6
O
C/W
q
JC
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10617
NO DEGRADATION IN OUTPUT POWER
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
H
A
MAXIMUM
inches / mm
.255 / 6.48
.7.30 / 18.54
.980 / 24.89
.230 / 5.84
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
S
G
S
D
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