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参数资料
| 型号： | HGT1S14N36G3VLS |
| 厂商： | INTERSIL CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体管.) |
| 中文描述： | 18 A, N-CHANNEL IGBT, TO-263AB |
| 文件页数： | 3/6页 |
| 文件大小： | 110K |
| 代理商： | HGT1S14N36G3VLS |
3-57
HGTP14N36G3VL, HGT1S14N36G3VL, HGT1S14N36G3VLS
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
I
C
,
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, V
CE
= 10V
20
15
10
5
0
25
2
1
3
4
5
+25
o
C
+175
o
C
-40
o
C
I
C
,
40
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s, DUTY CYCLE <0.5%, T
C
= +25
o
C
0
2
4
6
8
10
10V
5.0V
4.5V
3.0V
2.5V
4.0V
3.5V
10
0
30
4
V
CE(SAT)
, SATURATION VOLTAGE (V)
I
C
,
25
20
15
10
5
0
30
5
3
2
1
0
T
C
= +175
o
C
V
GE
= 5.0V
V
GE
= 4.0V
V
GE
= 4.5V
35
10
+25
o
C
I
C
,
V
CE(SAT)
, SATURATION VOLTAGE (V)
+175
o
C
-40
o
C
15
20
25
30
35
0
5
0
1
2
3
4
5
V
GE
= 4.5V
V
C
,
T
J
, JUNCTION TEMPERATURE (
o
C)
-25
+25
+75
+125
+175
1.25
1.15
1.05
1.35
V
GE
= 4.0V
V
GE
= 4.5V
V
GE
= 5.0V
I
CE
= 7A
T
J
, JUNCTION TEMPERATURE (
o
C)
V
C
,
-25
+25
+75
+125
+175
2.00
1.75
1.50
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 5.0V
I
CE
= 14A
2.25
相关PDF资料 |
PDF描述 |
|---|---|
| HGTP14N36G3VL | 14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体管.) |
| HGT1S14N37G3VLS | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| HGTP14N37G3VL | 14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 370V N沟道,逻辑电平,电压箝位IGBTs) |
| HGT1S20N36G3VL | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
| HGT1S20N36G3VLS | 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HGT1S14N36G3VLS9A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 390V V(BR)CES | 18A I(C) | TO-263AB |
| HGT1S14N36G3VLT | 功能描述:IGBT 晶体管 14a 380V Logic Level RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S14N36G3VLT_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGT1S14N37G3VLS | 功能描述:IGBT 晶体管 14A 370V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGT1S14N37G3VLS9A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB |
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