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参数资料
| 型号： | HGTG30N120D2 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30A, 1200V N-Channel IGBT |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 文件页数： | 4/5页 |
| 文件大小： | 40K |
| 代理商： | HGTG30N120D2 |
3-114
HGTG30N120D2
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
Test Circuit
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1.0
0.0
t
D
,
μ
s
1
10
100
T
J
= +150
o
C
V
CE
= 960V
L = 50
μ
H
I
CE
, COLLECTOR-EMITTER CURRENT (A)
V
GE
= 15V, R
G
= 50
V
GE
= 10V, R
G
= 50
V
GE
= 15V, R
G
= 25
V
GE
= 10V, R
G
= 25
2.0
1.5
0.5
100
10
1
f
O
,
1
10
70
I
CE
, COLLECTOR-EMITTER CURRENT (A)
P
D
= ALLOWABLE DISSIPATION
T
J
= +150
o
C, T
C
= +75
o
C, V
GE
= 15V
R
G
= 25
, L = 50
μ
H
V
CE
= 960V
V
CE
= 480V
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
C
= DUTY FACTOR = 50%
R
θ
JC
= 0.5
o
C/W
P
C
= CONDUCTION DISSIPATION
NOTE:
100
10
1
I
C
,
1
2
3
4
5
V
CE(ON)
, SATURATION VOLTAGE (V)
V
GE
= 10V
T
J
= +150
o
C
T
J
= +25
o
C
0
6
7
8
20V
0V
R
GEN
= 50
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 50
L = 25
μ
H
V
960V
+
-
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相关代理商/技术参数 |
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|---|---|
| HGTG30N60A4 | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60A4 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| HGTG30N60A4D | 功能描述:IGBT 晶体管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTG30N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG30N60A4D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-247 |
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