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参数资料
| 型号： | HGTP7N60A4_NL |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600V SMPS Series N-Channel IGBT |
| 中文描述： | 34 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 173K |
| 代理商： | HGTP7N60A4_NL |
2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
HGT1S7N60A4S9A, HGTG7N60A4
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Features
>100kHz Operation at 390V, 7A
200kHz Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125
oC
Low Conduction Loss
Symbol
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1S7N60A4S9A
TO-263AB
G7N60A4
HGTG7N60A4
TO-247
G7N60A4
HGTP7N60A4
TO-220AB
G7N60A4
NOTE: When ordering, use the entire part number.
C
E
G
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
Data Sheet
September 2004
HGTP7N60A4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP7N60B3 | 制造商:Harris Corporation 功能描述: |
| HGTP7N60B3D | 功能描述:IGBT 晶体管 PWR IGBT 14A 600V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTP7N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60C3D | 功能描述:IGBT 晶体管 14a 600V N-Ch IGBT UFS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTP7N60C3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 600V 14A TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, 600V, 14A, TO-220 |
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