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参数资料
| 型号： | HGTP7N60A4 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT N-CH SMPS 600V 34A TO220AB |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | IGBT TO-220AB Pkg |
| 标准包装： | 400 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.7V @ 15V，7A |
| 电流 - 集电极 (Ic)（最大）： | 34A |
| 功率 - 最大： | 125W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
| 其它名称： | HGTP7N60A4_NL HGTP7N60A4_NL-ND |
HGT1S7N60A4S9A, HGTG7N60A4
HGTP7N60A4
Data Sheet
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25 o C and 150 o C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Ordering Information
September 2004
Features
? >100kHz Operation at 390V, 7A
? 200kHz Operation at 390V, 5A
? 600V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . . . . . . 75 ns at T J = 125 o C
? Low Conduction Loss
Symbol
PART NUMBER
PACKAGE
BRAND
HGT1S7N60A4S9A
HGTG7N60A4
HGTP7N60A4
TO-263AB
TO-247
TO-220AB
G7N60A4
G7N60A4
G7N60A4
C
NOTE: When ordering, use the entire part number.
G
E
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
E
C
G
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(BOTTOM SIDE METAL)
JEDEC TO-263AB
COLLECTOR
G
(FLANGE)
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
?2004 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HGTP7N60A4_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HGTP7N60A4D | 功能描述:IGBT 晶体管 600V N-Ch IGBT SMPS Series HF RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| HGTP7N60A4NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTP7N60B3 | 制造商:Harris Corporation 功能描述: |
| HGTP7N60B3D | 功能描述:IGBT 晶体管 PWR IGBT 14A 600V N-CHANNEL RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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