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参数资料
| 型号： | HI649A |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 27K |
| 代理商： | HI649A |
HI-SINCERITY
MICROELECTRONICS CORP.
HI649A
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE9003
Issued Date : 1998.01.25
Revised Date : 2002.04.03
Page No. : 1/3
HI649A
HSMC Product Specification
Description
The HI649A is designed for low frequency power amplifier.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current........................................................................................................... -1.5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-1mA
IC=-10mA
IE=-1mA
VCB=-160V
IC=-500mA, IB=-50mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V,f=1MHz,IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
B
C
60-120
100-200
TO-251
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