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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certication.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Ofce Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
160 mils x 140 mils
METALLIZATION:
Type: Al
Thickness: 10k
±1k
SUBSTRATE POTENTIAL
V+
PASSIVATION:
Type: Nitride over Silox
Nitride Thickness: 8k
Silox Thickness: 7k
TRANSISTOR COUNT:
238
PROCESS:
CMOS Metal Gate
Metallization Mask Layout
HIN241A
T3OUT
T1OUT
T2OUT
R2IN
R2OUT T2IN T1IN R1OUT
R1IN GND
VCC
C1+
V+
C1-
C2+
C2-
V-
R5IN
R5OUT
T3IN
T4IN
R4OUT
R4IN
EN
SHD
T4OUT
R3IN
R3OUT
HIN202A thru HIN241A