参数资料
| 型号： | HIP2100EVAL |
| 厂商： | Intersil |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD MINI HALF BRIDGE |
| 标准包装： | 1 |
| 类型： | FET 驱动器 |
| 适用于相关产品： | HIP2100 |
| 所含物品： | 完全组装的评估板 |
TM
HIP2100EVAL General Purpose Design Tool
Description
Application Note
March 1996
AN9531.1
The HIP2100 General Purpose Design Tool is a very simple
evaluation board which can help the user rapidly construct
an isolated DC/DC converter in numerous configurations.
The board consists of the Intersil HIP2100 Half-Bridge Driver
HI
+12V
+100V
Q2-S
IC, two Intersil IRFR120 MOSFETs, a bootstrap capacitor,
and two input voltage decoupling capacitors. The HIP2100
can operate at frequencies exceeding 1MHz and has
LI
HIP2100EVAL
BOARD
Q1-D
SECONDARY
CIRCUIT
propagation delay times in the 20ns range. It has 2A drive
capability which allows it to drive an IRFR120 load with
switching times of less than 10ns.
+12V +100V
PWM
PWM
GND
ISOLATION
C2
0.1 μ
V DD
1
HB
2
C3
0.02 μ
Q2
FIGURE 2. TWO SWITCH FORWARD CONVERTER
Application #2: Half-Bridge Converter
4
HI
LI
HI
LI
5
6
3
U1
HIP2100
8
7
V SS
HO
HS
LO
C1
2 μ
Q1
Q2-S
Q1-D
To use the HIP2100EVAL as part of a half-bridge converter,
the user needs the configuration depicted in Figure 3. In this
topology, the MOSFETs are driven alternately (with some
dead time between turn-off of one and turn-on of the other).
Therefore, HI and LI are driven with alternating signals
PWM A and PWM B from the PWM controller. The +100V
input could also be the full 100VDC in this application.
FIGURE 1. HIP2100EVAL SCHEMATIC
GND
+12V
+100V
Application Information
The HIP2100 General Purpose Design Tool (HIP2100EVAL)
is intended for users who have some experience in power
HI
LI
HIP2100EVAL
BOARD
Q2-S
Q1-D
SECONDARY
CIRCUIT
converter design. The 100V rating of the HIP2100 makes it
an ideal choice for many isolated DC/DC converters which
are point-of-load converters in a distributed power architec-
ture. The node labeled “+100V” on the schematic, as well as
on the board itself, is the maximum voltage rating of the HS
PWM A
PWM
PWM B
GND
ISOLATION
node of the HIP2100. Therefore, depending upon the appli-
cation, the maximum input voltage that one would apply to
the “+100V” input could be less than 100VDC. Three possi-
ble application converters are described briefly below.
Application #1: Two-Switch Forward Converter
To use the HIP2100EVAL as part of a two-switch forward
converter, the user needs the configuration depicted in
Figure 2. In this topology, both MOSFETs are turned on and
off together. Therefore, HI and LI are tied together. The
signal PWM is from the pulse-width modulator (PWM)
controller, which is sensing the output voltage (and output
current if current-mode control is used). The Schottky
rectifiers clamp the reverse swing of the power transformer
and must be rated at the input voltage. The +100V input
could be the full 100VDC in this circuit.
FIGURE 3. HALF-BRIDGE CONVERTER
Application #3: Active-Clamp Forward Converter
To use the HIP2100EVAL as part of an active-clamp forward
converter, the user needs the configuration depicted in
Figure 4. In this topology, the MOSFETs are again driven
alternately, and HI and LI again need to be driven
separately. The high-side MOSFET (Q2 in the
HIP2100EVAL board), along with capacitor C RESET , is used
in this topology as a means to reset the power transformer in
a lossless manner. This topology lends itself well to running
at duty cycles exceeding 50% (unlike Applications 1 and 2).
For these reasons, the +100V input may not be able to
except the full 100VDC input for this application.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright ? Intersil Americas Inc. 2001. All Rights Reserved
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相关代理商/技术参数 |
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| HIP2100EVAL2 | 功能描述:电源管理IC开发工具 HIP EVALRD 48VDC T CNTLR W/ON-CHIP MCU RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| HIP2100IB | 功能描述:功率驱动器IC 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBT | 功能描述:功率驱动器IC TAPE AND REEL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBTS2075 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP2100IBZ | 功能描述:功率驱动器IC HIP2100IBZVERSION 100V HALF BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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