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参数资料
| 型号： | HIP2100IB |
| 厂商： | Intersil |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF-BRIDGE 8-SOIC |
| 标准包装： | 98 |
| 配置： | 半桥 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 114V |
| 电源电压： | 9 V ~ 14 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1239 (CN2011-ZH PDF) |
HIP2100
Pin Descriptions
SYMBOL
V DD
HB
HO
HS
HI
LI
V SS
LO
EPAD
DESCRIPTION
Positive Supply to lower gate drivers. De-couple this pin to V SS . Bootstrap diode connected to HB.
High-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin.
Bootstrap diode is on-chip.
High-Side Output. Connect to gate of High-Side power MOSFET.
High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap capacitor to
this pin.
High-Side input.
Low-Side input.
Chip negative supply, generally will be ground.
Low-Side Output. Connect to gate of Low-Side power MOSFET.
Exposed Pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.
Timing Diagrams
LI
HI ,
LI
HI
t HPLH ,
t LPLH
t HPHL ,
t LPHL
LO
HO ,
LO
FIGURE 3.
Typical Performance Curves
10
HO
10
t MON
FIGURE 4.
t MOFF
1
1
T = +150°C
T = -40°C
T = +125°C
T = +25°C
0.1
T = +150°C
T = +125°C
T = +25°C
T = -40°C
0.1
0.01
10k
100k
1M
0.01
10k
100k
1M
FREQUENCY (Hz)
FIGURE 5. OPERATING CURRENT vs FREQUENCY
6
FREQUENCY (Hz)
FIGURE 6. HB TO V SS OPERATING CURRENT vs
FREQUENCY
FN4022.14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP2100IBT | 功能描述:功率驱动器IC TAPE AND REEL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBTS2075 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP2100IBZ | 功能描述:功率驱动器IC HIP2100IBZVERSION 100V HALF BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBZT | 功能描述:功率驱动器IC VER 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBZT7A | 制造商:Intersil Corporation 功能描述:LEAD-FREE VERSION, 100V HALF BRIDGE DRIVER, 250PC T&R - Tape and Reel 制造商:Intersil Corporation 功能描述:IC HALF BRIDGE DRIVER 8SOIC 制造商:INTERSIL 功能描述:HIP2100 Series Low Side/High Side N-Ch 114 V 2 A Half Bridge Driver - SOIC-8 制造商:Intersil 功能描述:100V HALF BRIDGE Driver IC |
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