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参数资料
| 型号： | HIP2100IR4Z |
| 厂商： | Intersil |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRIDGE 100V 12DFN |
| 标准包装： | 75 |
| 配置： | 半桥 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 114V |
| 电源电压： | 9 V ~ 14 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-VFDFN 裸露焊盘 |
| 供应商设备封装： | 12-DFN-EP（4x4） |
| 包装： | 管件 |
?
HIP2100
Data Sheet
April 2, 2010
FN4022.14
100V/2A Peak, Low Cost, High Frequency
Half Bridge Driver
The HIP2100 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. The low-side and
high-side gate drivers are independently controlled and
matched to 8ns. This gives the user maximum flexibility in
dead-time selection and driver protocol. Undervoltage
protection on both the low-side and high-side supplies force
the outputs low. An on-chip diode eliminates the discrete
diode required with other driver ICs. A new level-shifter
topology yields the low-power benefits of pulsed operation
with the safety of DC operation. Unlike some competitors,
the high-side output returns to its correct state after a
momentary undervoltage of the high-side supply.
Ordering Information
Features
? Drives N-Channel MOSFET Half Bridge
? SOIC, EPSOIC, QFN and DFN Package Options
? SOIC, EPSOIC and DFN Packages Compliant with 100V
Conductor Spacing Guidelines of IPC-2221
? Pb-Free Product Available (RoHS Compliant)
? Bootstrap Supply Max Voltage to 114VDC
? On-Chip 1 Ω Bootstrap Diode
? Fast Propagation Times for Multi-MHz Circuits
? Drives 1000pF Load with Rise and Fall Times Typ. 10ns
? CMOS Input Thresholds for Improved Noise Immunity
? Independent Inputs for Non-Half Bridge Topologies
PART
TEMP.
? No Start-Up Problems
NUMBER
(Note 1)
PART
MARKING
RANGE
(°C)
PACKAGE
PKG.
DWG. #
? Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground, or HS Slewing at High dv/dt
HIP2100IB
HIP2100IBZ
(Note 2)
2100 IB
2100 IBZ
-40 to +125 8 Ld SOIC
-40 to +125 8 Ld SOIC
(Pb-free)
M8.15
M8.15
? Low Power Consumption
? Wide Supply Range
HIP2100EIBZ 2100 EIBZ
-40 to +125 8 Ld EPSOIC
M8.15C
? Supply Undervoltage Protection
(Note 2)
HIP2100IRZ HIP 2100IRZ
(Note 2)
HIP2100IR4Z 21 00IR4Z
(Note 2)
(Pb-free)
-40 to +125 16 Ld 5x5 QFN L16.5x5
(Pb-free)
-40 to +125 12 Ld 4x4 DFN L12.4x4A
(Pb-free)
? 3 Ω Driver Output Resistance
? QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves
NOTES:
2. These Intersil Pb-free plastic packaged products employ special Pb-
free material sets, molding compounds/die attach materials, and
100% matte tin plate plus anneal (e3 termination finish, which is
RoHS compliant and compatible with both SnPb and Pb-free
soldering operations). Intersil Pb-free products are MSL classified
at Pb-free peak reflow temperatures that meet or exceed the Pb-
free requirements of IPC/JEDEC J STD-020.
PCB Efficiency and has a Thinner Profile
Applications
? Telecom Half Bridge Power Supplies
? Avionics DC/DC Converters
? Two-Switch Forward Converters
? Active Clamp Forward Converters
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright ? Intersil Americas Inc. 2004, 2010. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP2100IR4ZT | 功能描述:功率驱动器IC 100V H-BRDG DRVR 12LD RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IRT | 功能描述:IC DRVR HALF BRDG 100V/2A 16-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP2100IRZ | 功能描述:功率驱动器IC 100V/2A H-BRDG DRVR 16LD MLFP 5X5 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IRZT | 功能描述:功率驱动器IC 100V/2A H-BRDG DRVR 16LD MLFP 5X5 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2101 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
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