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| 型号： | HIP2101EIBZ |
| 厂商： | Intersil |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRDG 100V 8EPSOIC |
| 标准包装： | 98 |
| 配置： | 半桥 |
| 输入类型： | PWM |
| 延迟时间： | 25ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 100V |
| 电源电压： | 9 V ~ 14 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 管件 |
| 产品目录页面： | 1239 (CN2011-ZH PDF) |
HIP2101
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V DD, V HB -V HS (Notes 3, 4) . . . . . . . . -0.3V to 18V
Thermal Resistance (Typical)
θ JA (°C/W)
θ JC (°C/W)
LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.0V
SOIC (Note 5) . . . . . . . . . . . . . . . . . . .
95 N/A
Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on HO (Note 4) . . . . . . . . . . . . . . . V HS -0.3V to V HB +0.3V
Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V DD to HB diode . . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
Maximum Recommended Operating Conditions
Supply Voltage, V DD . . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0
QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5
DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0
Max Power Dissipation at 25 o C in Free Air (SOIC, Note 5) . . . . 1.3W
Max Power Dissipation at 25 o C in Free Air (EPSOIC, Note 6). . 3.1W
Max Power Dissipation at 25 o C in Free Air (QFN, Note 6). . . . . 3.3W
Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to 150°C
Junction Temperature Range . . . . . . . . . . . . . . . . . . -55°C to 150°C
Lead Temperature (Soldering 10s - SOIC Lead Tips Only). . 300°C
For Recommended soldering conditions see Tech Brief TB389.
Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . V HS +8V to V HS +14.0V and V DD -1V to V DD +100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
NOTES:
3. The HIP2101 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this
mode of operation.
4. All voltages referenced to V SS unless otherwise specified.
5. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ JC, the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified
T J = -40°C TO
T J = 25°C
125°C
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
SUPPLY CURRENTS
V DD Quiescent Current
V DD Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V SS Current, Quiescent
HB to V SS Current, Operating
I DD
I DDO
I HB
I HBO
I HBS
I HBSO
LI = HI = 0V
f = 500kHz
LI = HI = 0V
f = 500kHz
V HS = V HB = 114V
f = 500kHz
-
-
-
-
-
-
0.3
1.7
0.1
1.5
0.05
0.7
0.45
3.0
0.15
2.5
1.5
-
-
-
-
-
-
-
0.6
3.4
0.2
3
10
-
mA
mA
mA
mA
μ A
mA
INPUT PINS
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Pulldown Resistance
V IL
V IH
R I
0.8
-
-
1.65
1.65
200
-
2.2
-
0.8
-
100
-
2.2
500
V
V
k ?
UNDER VOLTAGE PROTECTION
V DD Rising Threshold
V DD Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
V DDR
V DDH
V HBR
V HBH
7
-
6.5
-
7.3
0.5
6.9
0.4
7.8
-
7.5
-
6.5
-
6
-
8
-
8
-
V
V
V
V
4
FN9025.8
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| HIP2101EIBZT | 功能描述:功率驱动器IC 100V H-BRDG DRVR 8LD EP RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2101EIBZ-T | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
| HIP2101IB | 功能描述:功率驱动器IC 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2101IBT | 功能描述:IC DRIVER HALF-BRIDGE 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP2101IB-T | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:100V/2A Peak, Low Cost, High Frequency Half Bridge Driver |
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