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参数资料
| 型号： | HIP4080AIP |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 2.6 A FULL BRDG BASED MOSFET DRIVER, PDIP20 |
| 文件页数： | 5/15页 |
| 文件大小： | 199K |
| 代理商： | HIP4080AIP |
5
Pin Descriptions
PIN
NUMBER
SYMBOL
DESCRIPTION
1
BHB
B High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of boot-
strap diode and positive side of bootstrap capacitor to this pin. Internal charge pump supplies 30
μ
A out of this
pin to maintain bootstrap supply. Internal circuitry clamps the bootstrap supply to approximately 12.8V.
2
HEN
High-side Enable input. Logic level input that when low overrides IN+/IN- (Pins 6 and 7) to put AHO and BHO
drivers (Pins 11 and 20) in low output state. When HEN is high AHO and BHO are controlled by IN+/IN- inputs.
The pin can be driven by signal levels of 0V to 15V (no greater than V
DD
). An internal 100
μ
A pull-up to V
DD
will
hold HEN high, so no connection is required if high-side and low-side outputs are to be controlled by IN+/IN-
inputs.
3
DIS
DISable input. Logic level input that when taken high sets all four outputs low. DIS high overrides all other inputs.
When DIS is taken low the outputs are controlled by the other inputs. The pin can be driven by signal levels of
0V to 15V (no greater than V
DD
). An internal 100
μ
A pull-up to V
DD
will hold DIS high if this pin is not driven.
4
V
SS
Chip negative supply, generally will be ground.
5
OUT
OUTput of the input control comparator. This output can be used for feedback and hysteresis.
6
IN+
Noninverting input of control comparator. If IN+ is greater than IN- (Pin 7) then ALO and BHO are low level out-
puts and BLO and AHO are high level outputs. If IN+ is less than IN- then ALO and BHO are high level outputs
and BLO and AHO are low level outputs. DIS (Pin 3) high level will override IN+/IN- control for all outputs. HEN
(Pin 2) low level will override IN+/IN- control of AHO and BHO. When switching in four quadrant mode, dead
time in a half bridge leg is controlled by HDEL and LDEL (Pins 8 and 9).
7
IN-
Inverting input of control comparator. See IN+ (Pin 6) description.
8
HDEL
High-side turn-on DELay. Connect resistor from this pin to V
SS
to set timing current that defines the turn-on delay
of both high-side drivers. The low-side drivers turn-off with no adjustable delay, so the HDEL resistor guarantees
no shoot-through by delaying the turn-on of the high-side drivers. HDEL reference voltage is approximately 5.1V.
9
LDEL
Low-side turn-on DELay. Connect resistor from this pin to V
SS
to set timing current that defines the turn-on delay
of both low-side drivers. The high-side drivers turn-off with no adjustable delay, so the LDEL resistor guarantees
no shoot-through by delaying the turn-on of the low-side drivers. LDEL reference voltage is approximately 5.1V.
10
AHB
A High-side Bootstrap supply. External bootstrap diode and capacitor are required. Connect cathode of boot-
strap diode and positive side of bootstrap capacitor to this pin. Internal charge pump supplies 30
μ
A out of this
pin to maintain bootstrap supply. Internal circuitry clamps the bootstrap supply to approximately 12.8V.
11
AHO
A High-side Output. Connect to gate of A High-side power MOSFET.
12
AHS
A High-side Source connection. Connect to source of A High-side power MOSFET. Connect negative side of
bootstrap capacitor to this pin.
13
ALO
A Low-side Output. Connect to gate of A Low-side power MOSFET.
14
ALS
A Low-side Source connection. Connect to source of A Low-side power MOSFET.
15
V
CC
Positive supply to gate drivers. Must be same potential as V
DD
(Pin 16). Connect to anodes of two bootstrap
diodes.
16
V
DD
Positive supply to lower gate drivers. Must be same potential as V
CC
(Pin 15). De-couple this pin to V
SS
(Pin 4).
17
BLS
B Low-side Source connection. Connect to source of B Low-side power MOSFET.
18
BLO
B Low-side Output. Connect to gate of B Low-side power MOSFET.
19
BHS
B High-side Source connection. Connect to source of B High-side power MOSFET. Connect negative side of
bootstrap capacitor to this pin.
20
BHO
B High-side Output. Connect to gate of B High-side power MOSFET.
HIP4080A
相关PDF资料 |
PDF描述 |
|---|---|
| HIP4081IB | System Basic Chips (SBC); Package: PG-DSO-28; Transceiver: Fault-tollerant CAN ISO 11898 - 3; Voltage Regulator Output: 120 mA; Watchdog: Window Watchdog; Quiescent Current<sub> (max.): < 85 µA (5V on); Standby current: < 500 µA (5V on) |
| HIP4081 | 80V/2.5A Peak, High Frequency Full Bridge FET Driver |
| HIP4081IP | 80V/2.5A Peak, High Frequency Full Bridge FET Driver |
| HIP4082IB | 80V, 1.25A Peak Current H-Bridge FET Driver |
| HIP4082 | 80V, 1.25A Peak Current H-Bridge FET Driver |
相关代理商/技术参数 |
参数描述 |
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| HIP4080AIPR3165 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP4080AIPZ | 功能描述:功率驱动器IC 60-80VDC HI FREQ H-B RDG DRVR W/ RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP4080IB | 制造商:Harris Corporation 功能描述: |
| HIP4080IB WAF | 制造商:Harris Corporation 功能描述: |
| HIP4080IB/IP WAF | 制造商:Harris Corporation 功能描述: |
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