- 您现在的位置：买卖IC网 > PDF目录371821 > HIP4082IB (HARRIS SEMICONDUCTOR) 80V, 1.25A Peak Current H-Bridge FET Driver PDF资料下载
参数资料
| 型号： | HIP4082IB |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | MOSFETs |
| 英文描述： | 80V, 1.25A Peak Current H-Bridge FET Driver |
| 中文描述： | 1.3 A FULL BRDG BASED MOSFET DRIVER, PDSO16 |
| 文件页数： | 10/11页 |
| 文件大小： | 72K |
| 代理商： | HIP4082IB |
10
HIP4082
E16.3
(JEDEC MS-001-BB ISSUE D)
16 LEAD DUAL-IN-LINE PLASTIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
-
0.210
-
5.33
4
A1
0.015
-
0.39
-
4
A2
0.115
0.195
2.93
4.95
-
B
0.014
0.022
0.356
0.558
-
B1
0.045
0.070
1.15
1.77
8, 10
C
0.008
0.014
0.204
0.355
-
D
0.735
0.775
18.66
19.68
5
D1
0.005
-
0.13
-
5
E
0.300
0.325
7.62
8.25
6
E1
0.240
0.280
6.10
7.11
5
e
0.100 BSC
2.54 BSC
-
e
A
e
B
L
0.300 BSC
7.62 BSC
6
-
0.430
-
10.92
7
0.115
0.150
2.93
3.81
4
N
16
16
9
Rev. 0 12/93
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between
English and Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M
-
1982.
3. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated
in JEDEC seating plane gauge GS
-
3.
5. D, D1, and E1 dimensions do not include mold flash or protru-
sions. Mold flash or protrusions shall not exceed 0.010 inch
(0.25mm).
6. E and
are measured with the leads constrained to be per-
pendicular to datum
.
7. e
B
and e
C
are measured at the lead tips with the leads uncon-
strained. e
C
must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions.
Dambar protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3,
E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch
(0.76 - 1.14mm).
C
e
A
E
C
e
B
e
C
-B-
E1
INDEX
AREA
1 2
3
N/2
N
SEATING
PLANE
BASE
PLANE
-C-
D1
B1
B
e
D
D1
A
A2
L
A1
-A-
0.010 (0.25)
C
A
M
B S
e
A
-C-
Dual-In-Line Plastic Packages (PDIP)
相关PDF资料 |
PDF描述 |
|---|---|
| HIP4082 | 80V, 1.25A Peak Current H-Bridge FET Driver |
| HIP4082IP | 30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN |
| HIP5010IS-T | Output Stage |
| HIP5011IS-T | Output Stage |
| HIP5011IS1 | 7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP4082IBS2599 | 制造商:Intersil Corporation 功能描述: |
| HIP4082IBT | 功能描述:功率驱动器IC TAPE & VER OF STDARD HIP4082IB RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP4082IBTS2457 | 制造商:Intersil Corporation 功能描述: |
| HIP4082IBZ | 功能描述:功率驱动器IC 80V H BRDG FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP4082IBZ | 制造商:Intersil Corporation 功能描述:IC MOSFET DRIVER QUAD |
发布紧急采购，3分钟左右您将得到回复。