参数资料
型号: HIP4082IP
厂商: HARRIS SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
中文描述: 1.3 A FULL BRDG BASED MOSFET DRIVER, PDIP16
文件页数: 7/11页
文件大小: 72K
代理商: HIP4082IP
7
HIP4082
Performance Curves
FIGURE 4. I
DD
SUPPLY CURRENT vs TEMPERATURE AND
V
DD
SUPPLY VOLTAGE
FIGURE 5. V
DD
SUPPLY CURRENT vs TEMPERATURE AND
SWITCHING FREQUENCY (1000pF LOAD)
FIGURE 6. FLOATING (IXHB) BIAS CURRENT vs FREQUENCY
AND LOAD
FIGURE 7. GATE SOURCE/SINK PEAK CURRENT vs BIAS
SUPPLY VOLTAGE AT 25
o
C
FIGURE 8. GATE CURRENT vs TEMPERATURE, NORMALIZED
TO 25
o
C
FIGURE 9. V
DD
-V
OH
vs BIAS VOLTAGE TEMPERATURE
-60
-40
-20
0
20
40
60
80
100
120
140
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
JUNCTION TEMPERATURE (
o
C)
I
D
V
DD
= 16V
V
DD
= 15V
V
DD
= 12V
V
DD
= 10V
V
DD
= 8V
-60
-40
-20
0
20
40
60
80
100
120
140
4
5
6
7
8
9
10
11
12
13
14
15
16
JUNCTION TEMPERATURE (
o
C)
I
D
200kHz
100kHz
50kHz
10kHz
0
50
100
150
200
0
1
2
3
4
5
6
7
8
FREQUENCY (kHz)
L
1000pF LOAD
NO LOAD
8
8
9
10
11
12
13
14
15
15
0.5
0.75
1
1.25
1.5
1.75
BIAS SUPPLY VOLTAGE (V) AT 25
o
C
P
1.925
0.815
I
SRC
(BIAS
)
I
SNK
(BIAS)
BIAS
2
SOURCE
SINK
-75
-50
-25
0
25
50
75
100
125
150
0.8
0.9
1
1.1
1.2
JUNCTION TEMPERATURE (
o
C)
N
S
8
9
10
11
12
13
14
15
0.6
1
1.4
V
DD
SUPPLY VOLTAGE (V)
V
D
-
O
1.2
0.8
-55
o
C
-40
o
C
0
o
C
25
o
C
125
o
C
150
o
C
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