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| 型号： | HIP4086AABZ |
| 厂商： | Intersil |
| 文件页数： | 11/16页 |
| 文件大小： | 0K |
| 描述： | IC DVR MOSFET N-CH 3PHASE 24SOIC |
| 产品培训模块： | Solutions for Industrial Control Applications |
| 标准包装： | 300 |
| 配置： | 3 相桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 65ns |
| 电流 - 峰： | 500mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 95V |
| 电源电压： | 7 V ~ 15 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
HIP4086, HIP4086A
C boot = 0.52 μ F
Charge Pump
The internal charge pump of the HIP4086/A is used to maintain
the bias on the boot cap for 100% duty cycle. There is no limit for
the duration of this period. The user must understand that this
charge pump is only intended to provide the static bias current of
the high-side drivers and the gate leakage current of the
high-side bridge FETs. It cannot provide in a reasonable time, the
majority of the charge on the boot cap that is consumed, when
the xHO drivers source the gate charge to turn on the high-side
bridge FETs. The boot caps should be sized so that they do not
discharge excessively when sourcing the gate charge. See
boot caps.
The charge pump has sufficient capacity to source a worst-case
minimum of 50μA to the external load. The gate leakage current
of most power MOSFETs is about 100nA so there is more than
sufficient current to maintain the charge on the boot caps.
Because the charge pump current is small, a gate-source resistor
on the high-side bridge FETs is not recommended. When
calculating the leakage load on the outputs of xHS, also include
Equation 1 calculates the total charge required for the Period
duration. This equation assumes that all of the parameters are
constant during the Period duration. The error is insignificant if
Ripple is small.
Q C = Q gate80V + Period × (I HB + V HO ? R GS + I gate_leak )
C boot = Q C ? ( Ripple ? VDD )
(EQ. 1)
If the gate to source resistor is removed (R GS is usually not
needed or recommended), then:
C boot = 0.33μF
These values of C boot will sustain the high side driver bias during
Period with only a small amount of Ripple. But in the case of the
HIP4086, the charge pump reduces the value of C boot even
more. The specified charge pump current is a minimum of 50μA
which is more than sufficient to source I gate_leak . Also, because
the specified charge pump current is in excess of what is needed
for I HB , the total charge required to be sourced by the boot
capacitor is just
the leakage current of the boot capacitor. This is rarely a problem
but it could be an issue with electrolytic capacitors at high
Q C = Q gate80V or C boot = 0.13 μ F
(EQ. 2)
temperatures.
Application Information
Selecting the Boot Capacitor Value
The boot capacitor value is chosen not only to supply the internal
bias current of the high-side driver but also, and more
significantly, to provide the gate charge of the driven FET without
causing the boot voltage to sag excessively. In practice, the boot
capacitor should have a total charge that is about 20 times the
gate charge of the driven power FET for approximately a 5% drop
in voltage after charge has been transferred from the boot
capacitor to the gate capacitance.
The following parameters shown in Table 1 are required to
calculate the value of the boot capacitor for a specific amount of
voltage droop when using the HIP4086/A (no charge pump). In
Table 1, the values used are arbitrary. They should be changed to
comply with the actual application.
TABLE 1.
Not only is the required boot cap smaller in value, there is no
restriction on the duration of Period.
FIGURE 21. TYPICAL GATE VOLTAGE vs GATE CHARGE
V DD = 10V
V HB = V DD - 0.6V
= V HO
Period = 1ms
I HB = 100μA
R GS = 100k Ω
Ripple = 5%
I gate_leak = 100nA
Qgate80V = 64nC
V DD can be any value between 7 and 15VDC
High side driver bias voltage (V DD - boot diode
voltage) referenced to V HS
This is the longest expected switching period
Worst case high side driver current when
xHO = high (this value is specified for V DD = 12V
but the error is not significant)
Gate-source resistor (usually not needed)
Desired ripple voltage on the boot cap (larger
ripple is not recommended)
From the FET vendor’s datasheet
From Figure 21.
11
FN4220.9
February 1, 2013
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP4086AABZT | 功能描述:马达/运动/点火控制器和驱动器 80V 0 5A 3-PHS MSFT DRVR W/OUT CHRG PUM RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| HIP4086AB | 功能描述:功率驱动器IC 80 V 1 25A 3 PHS FL WAVE DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP4086AB/AP DIE | 制造商:Harris Corporation 功能描述: |
| HIP4086ABT | 功能描述:功率驱动器IC VER OF HIP4086AB RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP4086ABZ | 功能描述:功率驱动器IC 80V 1.25A 3 PHS FL W V DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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