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参数资料
| 型号： | HIP5010IS1 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 外设及接口 |
| 英文描述： | 7V, 17A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge |
| 中文描述： | HB BASED PRPHL DRVR WITH PWM, PZFM7 |
| 文件页数： | 3/6页 |
| 文件大小： | 38K |
| 代理商： | HIP5010IS1 |
2-5
Absolute Maximum Ratings
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16V
Input Voltage V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V
I
PHASE,
I
VIN,
I
GND
(T
J
= 25
o
C). . . . . . . . . . . 17A (Repetitive Peak)
I
PHASE,
I
VIN,
I
GND
(T
J
= 150
o
C) . . . . . . . . . . 15A (Repetitive Peak)
PWM Input. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4V to +16V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 3 (4kV)
Lead Temperature (Soldering 10s) (Lead Tips Only). . . . . . . 300
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65
o
C to 150
o
C
Junction Temperature Range. . . . . . . . . . . . . . . . . . -40
o
C to 150
o
C
Thermal Information
(Typical)
θ
JC
(
o
C/W)
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V, 20%
Input Voltage VIN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 5.5V
Supply Voltage, VCC, minimum for charge-pumped start-up .+4.0V
Package
θ
JA
(
o
C/W)
2
0
1
3
3
SOIC (IB) . . .
SIP (IS). . . . .
26
2
63
55
45
42
25
41
24
35
18
30
SIP (IS1). . . .
2
-
-
-
-
-
Versus additional square inches of 1 ounce copper on the
printed circuit board
.
θ
JC
is measured to pin 12 for the SOIC. Printed circuit board
had 1 square inch of copper. For SIP Packages value shown is
typical with an infinite heat sink.
200 linear feet per minute of air flow.
I
PHASE
.SIPs:11.5A(RMS), 11.2A(DC); SOIC:7.4A(RMS), 7.4A(DC)
I
VIN
. . . SIPs:10.0A(RMS), 8.5A(DC); SOIC:6.4A(RMS), 6.4A(DC)
I
GND
. . . . .SIPs:8.5A(RMS), 6.0A(DC); SOIC:5.4A(RMS), 5.4A(DC)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
Electrical Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
T
J
= 25
o
C
T
J
= - 40
o
C
T
J
= 150
o
C
UNITS
MIN
TYP
MAX
MIN
MAX
r
DS(ON)
Upper MOSFET
R
DSU
V
CC
= 12V, V
IN
= 5V
-
34
39
-
65
m
r
DS(ON)
Lower MOSFET
R
DSL
V
CC
= 12V, V
IN
= 5V
-
36
42
-
68
m
V
IN
Operating Current
I
VINO
V
IN
= 5V, No Load, 500kHz
-
5
8
-
10
mA
V
IN
Quiescent Current
I
VIN
PWM or PWM = V
CC
or GND
-
0.1
10
-
100
μ
A
V
CC
Operating Current
I
CCO
V
CC
= 12V, 500kHz
-
8
12
-
15
mA
V
CC
Quiescent Current (HIP5010)
I
CCIH
PWM = V
CC
-
80
-
-
400
μ
A
V
CC
Quiescent Current (HIP5010)
I
CCIL
PWM = GND
-
0.1
10
-
100
μ
A
V
CC
Quiescent Current (HIP5011)
I
CCNIH
PWM = V
CC
-
0.1
10
-
100
μ
A
V
CC
Quiescent Current (HIP5011)
I
CCNIL
PWM = GND
-
140
-
-
400
μ
A
Low Level PWM Input Voltage
V
IL
-
1.8
-
1
-
V
High Level PWM Input Voltage
V
IH
-
2.1
-
-
3
V
PWM Input Voltage Hysteresis
V
IHYS
-
0.3
-
-
-
V
Input Pulldown Resistance (HIP5010)
R
PWM
-
220
-
100
400
k
Input Pullup Resistance (HIP5011)
R
PWM
-
220
-
100
400
k
Switching Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
T
J
= 25
o
C
T
J
= - 40
o
C
T
J
= 150
o
C
UNITS
MIN
TYP
MAX
MIN
MAX
Upper Device Turn-Off Delay
t
PHL
V
CC
= 12V, I
PHASE
= -1A
-
30
50
-
80
ns
Lower Device Turn-Off Delay
t
PLH
V
CC
= 12V, I
PHASE
= +1A
-
30
50
-
80
ns
Dead Time
t
DT
V
CC
= +12V, I
PHASE
= -1A
-
10
-
-
-
ns
Phase Rise-Time
t
r
V
CC
= 12V, I
PHASE
= -1A
-
20
-
-
-
ns
Phase Fall-Time
t
f
V
CC
= 12V, I
PHASE
= +1A
-
20
-
-
-
ns
HIP5010, HIP5011
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