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参数资料
| 型号： | HIP5015IS |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 外设及接口 |
| 英文描述： | 7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge |
| 中文描述： | 7 A HB BASED PRPHL DRVR WITH PWM, PSSO7 |
| 文件页数： | 3/6页 |
| 文件大小： | 38K |
| 代理商： | HIP5015IS |
2-10
Absolute Maximum Ratings
Thermal Information
(Typical)
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16V
Input Voltage
V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V
I
PHASE,
I
VIN,
I
GND
. . . . . . . . . . . . . . . . . . . . . 7A (Repetitive Peak)
PWM Input. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4V to +16V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 3 (4kV)
Lead Temperature (Soldering 10s) (Lead Tips Only). . . . . . . 300
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65
o
C to 150
o
C
Junction Temperature Range. . . . . . . . . . . . . . . . . . -40
o
C to 150
o
C
Operating Conditions
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . +12V,
±
20%
Input Voltage
V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 5.5V
Supply Voltage, V
CC,
minimum for charge-pumped start-up . . . .+4.0V
Package
θ
JC
(
o
C/W)
θ
JA
(
o
C/W)
2
0
1
3
3
SIP (IS). . . . .
2
55
30
25
24
18
SIP (IS1). . . .
2
55
-
-
-
-
Versus additional square inches of 1 ounce copper on the
printed circuit board
.
θ
JC
is typical with an infinite heatsink.
200 linear feet per minute of air flow.
I
PHASE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5A
I
VIN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4A
I
GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25
o
C
T
J
= - 40
o
C
T
J
= +150
o
C
UNITS
MIN
TYP
MAX
MIN
MAX
r
DS(ON)
Upper MOSFET
R
DSU
V
CC
= 12V,
V
IN
= 5V
V
CC
= 12V,
V
IN
= 5V
V
IN
= 5V, No Load, 500kHz
PWM or PWM =
V
CC
or GND
V
CC
= 12V, 500kHz
PWM =
V
CC
-
68
78
-
130
m
r
DS(ON)
Lower MOSFET
V
IN
Operating Current
V
IN
Quiescent Current
V
CC
Operating Current
V
CC
Quiescent Current (HIP5015)
V
CC
Quiescent Current (HIP5015)
V
CC
Quiescent Current (HIP5016)
V
CC
Quiescent Current (HIP5016)
R
DSL
-
72
82
-
136
m
I
VINO
-
1.8
4
-
5
mA
I
VIN
-
0.1
10
-
100
μ
A
I
CCO
-
4.3
7
-
9
mA
I
CCIH
-
40
-
-
300
μ
A
I
CCIL
PWM = GND
-
0.1
10
-
100
μ
A
I
CCNIH
PWM =
V
CC
-
0.1
10
-
100
μ
A
I
CCNIL
PWM = GND
-
100
-
-
300
μ
A
Low Level PWM Input Voltage
V
IL
-
1.8
-
1
-
V
High Level PWM Input Voltage
V
IH
-
2.1
-
-
3
V
PWM Input Voltage Hysteresis
V
IHYS
-
0.3
-
-
-
V
Input Pulldown Resistance (HIP5015)
R
PWM
-
220
-
100
400
k
Input Pullup Resistance (HIP5016)
R
PWM
-
220
-
100
400
k
Switching Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
T
J
= 25
o
C
T
J
= - 40
o
C
T
J
= +150
o
C
UNITS
MIN
TYP
MAX
MIN
MAX
Upper Device Turn-Off Delay
t
PHL
V
CC
= 12V, I
PHASE
= -0.5A
-
30
50
-
80
ns
Lower Device Turn-Off Delay
t
PLH
V
CC
= 12V, I
PHASE
= +0.5A
-
30
50
-
80
ns
Dead Time
t
DT
V
CC
= +12V, I
PHASE
= -0.5A
-
10
-
-
-
ns
Phase Rise-Time
t
r
V
CC
= 12V, I
PHASE
= -0.5A
-
20
-
-
-
ns
Phase Fall-Time
t
f
V
CC
= 12V, I
PHASE
= +0.5A
-
20
-
-
-
ns
HIP5015, HIP5016
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP5015IS WAF | 制造商:Harris Corporation 功能描述: |
| HIP5015IS1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP5016 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge |
| HIP5016IS | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP5016IS WAF | 制造商:Harris Corporation 功能描述: |
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