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参数资料
| 型号： | HIP6004ECBZ |
| 厂商： | INTERSIL CORP |
| 元件分类： | 稳压器 |
| 英文描述： | Buck and Synchronous-Rectifier (PWM) Controller and Output Voltage Monitor |
| 中文描述： | SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO20 |
| 封装： | LEAD FREE, PLASTIC, MS-013AC, SOIC-20 |
| 文件页数： | 10/13页 |
| 文件大小： | 504K |
| 代理商： | HIP6004ECBZ |
10
within their maximum junction temperature at high ambient
temperature by calculating the temperature rise according to
package thermal-resistance specifications. A separate heatsink
may be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
Standard-gate MOSFETs are normally recommended for
use with the HIP6004E. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFET’s absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by a
bootstrap circuit from V
CC
. The boot capacitor, C
BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V
CC
less the boot diode drop (V
D
) when the lower MOSFET, Q
2
turns on. Logic-level MOSFETs can only be used if the
MOSFET’s absolute gate-to-source voltage rating exceeds
the maximum voltage applied to VCC.
Figure 10 shows the upper gate drive supplied by a direct
connection to V
CC
. This option should only be used in
converter systems where the main input voltage is +5V
DC
or
less. The peak upper gate-to-source voltage is approximately
V
CC
less the input supply. For +5V main power and +12V
DC
for the bias, the gate-to-source voltage of Q
1
is 7V. A logic-
level MOSFET is a good choice for Q
1
and a logic-level
MOSFET can be used for Q
2
if its absolute gate-to-source
voltage rating exceeds the maximum voltage applied to V
CC
.
P
UPPER
= Io
2
x r
DS(ON)
x D +1
2
Io x V
IN
x t
SW
x F
S
P
LOWER
= Io
2
x r
DS(ON)
x (1 - D)
Where: D is the duty cycle = V
OUT
/ V
IN
,
t
SW
is the switch ON time, and
F
S
is the switching frequency.
+12V
PGND
HIP6004E
GND
LGATE
UGATE
PHASE
BOOT
VCC
+5V OR +12V
NOTE:
V
G-S
≈
V
CC
-V
D
NOTE:
V
G-S
≈
V
CC
C
BOOT
D
BOOT
Q1
Q2
+
-
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
D2
+ V
D
-
+12V
PGND
HIP6004E
GND
LGATE
UGATE
PHASE
BOOT
V
CC
+5V OR LESS
NOTE:
V
G-S
≈
V
CC
-5V
NOTE:
V
G-S
≈
V
CC
Q
1
Q
2
+
-
FIGURE 10. UPPER GATE DRIVE - DIRECT V
CC
DRIVE OPTION
D
2
HIP6004E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6004ECBZ-T | 功能描述:电压模式 PWM 控制器 BUCK & SYNCH -RECT PWMCNTRLR & OUTPUT RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004ECV | 功能描述:IC CTRLR PWM VOLTAGE MON 20TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| HIP6004ECV-T | 功能描述:IC CTRLR PWM VOLTAGE MON 20TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| HIP6004ECVZ | 功能描述:电压模式 PWM 控制器 20LD BUCK & SYNCHCT PWMCONT & OUTPUT RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| HIP6004ECVZ-T | 功能描述:电压模式 PWM 控制器 20LD BUCK&SYNCHCT PWMCONOUTPUT RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
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