参数资料
| 型号： | HIP6007CB |
| 厂商： | Intersil |
| 文件页数： | 9/10页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWM STD BUCK 14-SOIC |
| 标准包装： | 50 |
| 应用： | 控制器，Intel Pentium? Pro、PowerP、Alpha |
| 输入电压： | 2.5 V ~ 12 V |
| 输出数： | 1 |
| 输出电压： | 1.27 V ~ 12 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOICN |
| 包装： | 管件 |
HIP6007
MOSFET Selection/Considerations
The HIP6007 requires an N-Channel power MOSFET. It
+12V
D BOOT
should be selected based upon r DS(ON) , gate supply
requirements, and thermal management requirements.
VCC
+
V D
-
+5V OR +12V
In high-current applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes
two loss components; conduction loss and switching loss.
HIP6007
BOOT
UGATE
PHASE
C BOOT
Q1
NOTE:
V G-S ≈ V CC - V D
The conduction losses are the largest component of power
dissipation for the MOSFET. Switching losses also
contribute to the overall MOSFET power loss (see the
equations below). These equations assume linear voltage-
current transitions and are approximations. The gate-
charge losses are dissipated by the HIP6007 and don't
heat the MOSFET. However, large gate-charge increases
the switching interval, t SW , which increases the upper
MOSFET switching losses. Ensure that the MOSFET is
within its maximum junction temperature at high ambient
D2
-
+
GND
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
temperature by calculating the temperature rise according
to package thermal-resistance specifications. A separate
heatsink may be necessary depending upon MOSFET
+12V
VCC
+5V OR LESS
P SW = 2 I O x V IN x t SW x Fs
power, package type, ambient temperature and air flow.
P COND = I O2 x r DS(ON) x D
1
Where: D is the duty cycle = V O / V IN ,
t SW is the switching interval, and
Fs is the switching frequency.
HIP6007
-
+
BOOT
UGATE
PHASE
Q1
D2
NOTE:
V G-S ≈ V CC - 5V
Standard-gate MOSFETs are normally recommended for
use with the HIP6007. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFET’s absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from V CC . The boot capacitor, C BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V CC
less the boot diode drop (V D ) when the lower MOSFET, Q2
turns on. A logic-level MOSFET can only be used for Q1 if
the MOSFET’s absolute gate-to-source voltage rating
exceeds the maximum voltage applied to V CC .
Figure 10 shows the upper gate drive supplied by a direct
connection to VCC. This option should only be used in
converter systems where the main input voltage is +5VDC
or less. The peak upper gate-to-source voltage is
approximately V CC less the input supply. For +5V main
power and +12VDC for the bias, the gate-to-source voltage
of Q1 is 7V. A logic-level MOSFET is a good choice for Q1
and a logic-level MOSFET is a good choice for Q1 under
these conditions.
139
GND
FIGURE 10. UPPER GATE DRIVE - DIRECT V CC DRIVE OPTION
Schottky Selection
Rectifier D2 conducts when the upper MOSFET Q1 is off.
The diode should be a Schottky type for low power losses.
The power dissipation in the schottky rectifier is
approximated by:
P COND = I O x V f x (1 - D)
Where: D is the duty cycle = V O /V IN , and
V f is the schottky forward voltage drop
In addition to power dissipation, package selection and
heatsink requirements are the main design tradeoffs in
choosing the schottky rectifier. Since the three factors are
interrelated, the selection process is an iterative procedure.
The maximum junction temperature of the rectifier must
remain below the manufacturer’s specified value, typically
125 o C. By using the package thermal resistance specification
and the schottky power dissipation equation (shown above),
the junction temperature of the rectifier can be estimated. Be
sure to use the available airflow and ambient temperature to
determine the junction temperature rise.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6007CB-T | 功能描述:IC CTRLR PWM STD BUCK 14-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 稳压器 - 专用型 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,000 系列:- 应用:电源，ICERA E400，E450 输入电压:4.1 V ~ 5.5 V 输出数:10 输出电压:可编程 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:42-WFBGA，WLCSP 供应商设备封装:42-WLP 包装:带卷 (TR) |
| HIP6007EVAL1 | 制造商:Intersil Corporation 功能描述:EVAL KIT FOR BUCK PULSE-WIDTH MODULATOR (PWM) CNTRLR - Bulk |
| HIP6008 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Buck Pulse-Width Modulator (PWM) Controller and Output Voltage Monitor |
| HIP6008CB | 制造商:Rochester Electronics LLC 功能描述:PWMCONTROLLER4/BITDACW/4BITDAC1.5%16NBSOIC" - Bulk |
| HIP6008CB-T | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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