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| 型号： | HIP6501ACB |
| 厂商： | Intersil |
| 文件页数： | 12/14页 |
| 文件大小： | 0K |
| 描述： | IC PWM TRIPLE POWER CTRLR 16SOIC |
| 标准包装： | 48 |
| 应用： | 电源控制器 |
| 电源电压： | 5V，12V |
| 电流 - 电源： | 20mA |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
HIP6501A
Q4
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V DUAL output during S3 and
S4/S5 states (as dictated by EN5VDL status), then, similar to
the situation where Q1 is a MOSFET, the selection criteria of
this device is also proper voltage budgeting. The maximum
r DS(ON) , however, has to be achieved with only 4.5V of V GS ,
so a logic level MOSFET needs to be selected. If a PNP
device is chosen to perform this function, it has to have a low
saturation voltage while providing the maximum sleep-state
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA;
4mA during soft-start).
12
Q3, Q5
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in
active (S0, S1) states. Similar r DS(ON) criteria apply in these
cases as well, unlike the PMOS, however, these NMOS
transistors get the benefit of an increased V GS drive
(approximately 8V and 7V, respectively).
Q2
The NPN transistor used as sleep-state pass element on the
3.3V DUAL output must have a minimum current gain of 100
at V CE = 1.5V, and I CE = 500mA throughout the in-circuit
operating temperature range.
FN4749.6
December 30, 2004
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相关代理商/技术参数 |
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| HIP6501ACB-T | 功能描述:IC PWM TRIPLE POWER CTRLR 16SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - 电源控制器，监视器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- 应用:多相控制器 输入电压:- 电源电压:9 V ~ 14 V 电流 - 电源:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:40-WFQFN 裸露焊盘 供应商设备封装:40-TQFN-EP（5x5） 包装:带卷 (TR) |
| HIP6501ACBZ | 功能描述:PMIC 解决方案 COMPANION CHIP TO HI6020/21 RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| HIP6501ACBZ-T | 功能描述:PMIC 解决方案 COMPANION CHIP TO HIP60/21 TAPE/REEL RoHS:否 制造商:Texas Instruments 安装风格:SMD/SMT 封装 / 箱体:QFN-24 封装:Reel |
| HIP6501AEVAL1 | 功能描述:电源管理IC开发工具 HIP6501A EVAL BRD FOR ACPI PWR MGT RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| HIP6501CB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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