参数资料
型号: HIP6501EVAL1
厂商: Intersil Corporation
元件分类: 基准电压源/电流源
英文描述: Triple Linear Power Controller with ACPI Control Interface
中文描述: 三线性电源控制器ACPI控制接口
文件页数: 12/14页
文件大小: 140K
代理商: HIP6501EVAL1
12
Q4
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V
DUAL
output during S3 and
S4/S5 states (as dictated by EN5VDL status), then, similar
to the situation where Q1 is a MOSFET, the selection criteria
of this device is also proper voltage budgeting. The
maximum r
DS(ON)
, however, has to be achieved with only
4.5V of V
GS
, so a logic level MOSFET needs to be selected.
If a PNP device is chosen to perform this function, it has to
have a low saturation voltage while providing the maximum
sleep-state current and have a current gain sufficiently high
to be saturated using the minimum drive current (typically
20mA; 4mA during soft-start).
Q3, Q5
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in active
(S0, S1) states. Similar r
DS(ON)
criteria apply in these cases
as well, unlike the PMOS, however, these NMOS transistors
get the benefit of an increased V
GS
drive (approximately 8V
and 7V, respectively).
Q2
The NPN transistor used as sleep-state pass element on the
3.3V
DUAL
output must have a minimum current gain of 100
at V
CE
= 1.5V, and I
CE
= 500mA throughout the in-circuit
operating temperature range.
HIP6501A
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