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参数资料
| 型号： | HIP6601BCB-T |
| 厂商： | Intersil |
| 文件页数： | 10/12页 |
| 文件大小： | 0K |
| 描述： | IC DRVR MOSFET SYNC BUCK 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 400mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 15V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
HIP6601B, HIP6603B, HIP6604B
Small Outline Exposed Pad Plastic Packages (EPSOIC)
N
M8.15B
INDEX
AREA
E
H
0.25(0.010) M
B M
8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD
PLASTIC PACKAGE
INCHES
MILLIMETERS
-B-
SYMBOL
MIN
MAX
MIN
MAX
NOTES
1
2
3
A
0.056
0.066
1.43
1.68
-
A1
0.001
0.005
0.03
0.13
-
TOP VIEW
SEATING PLANE
L
B
C
D
E
0.0138
0.0075
0.189
0.150
0.0192
0.0098
0.196
0.157
0.35
0.19
4.80
3.81
0.49
0.25
4.98
3.99
9
-
3
4
-A-
D
A
h x 45 o
e
H
0.050 BSC
0.230
0.244
1.27 BSC
5.84
6.20
-
-
-C-
α
h
0.010
0.016
0.25
0.41
5
e
B
0.25(0.010) M
C A M
B S
A1
0.10(0.004)
C
L
N
α
0.016
0°
8
0.035
8°
0.41
0°
8
0.89
8°
6
7
-
P
-
0.094
-
2.387
11
SIDE VIEW
P1
-
0.094
-
2.387
11
Rev. 5 8/10
NOTES:
1
2
3
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
N
P
BOTTOM VIEW
P1
10
2. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: INCH. Converted millimeter dimensions
are not necessarily exact.
11. Dimensions “P” and “P1” are thermal and/or electrical enhanced
variations. Values shown are maximum size of exposed pad
within lead count and body size.
FN9072.8
May 1, 2012
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6601BCBZ | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ | 制造商:Intersil Corporation 功能描述:MOSFET Driver IC |
| HIP6601BCBZA | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZA-T | 功能描述:功率驱动器IC W/ANNEAL SYNCH-RECT BUCK FET DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6601BCBZ-T | 功能描述:功率驱动器IC SYNCH-RECT BUCK FET DRVR W/REDUCED POR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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