参数资料
型号: HIP6602BCRZA
厂商: Intersil
文件页数: 9/12页
文件大小: 0K
描述: IC DRVR MOSF 2CH SYC BUCK 16-QFN
标准包装: 60
配置: 高端和低端,同步
输入类型: PWM
电流 - 峰: 400mA
配置数: 2
输出数: 4
高端电压 - 最大(自引导启动): 15V
电源电压: 10.8 V ~ 13.2 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-VQFN 裸露焊盘
供应商设备封装: 16-QFN-EP(5x5)
包装: 管件
HIP6602B
Typical Performance Curves
1200
C U = C L
1200
PVCC = VCC = 12V
1000
= 5nF
1000
800
C U = C L
= 4nF
C U = C L
= 3nF
PVCC = 12V
VCC = 12V
800
C U = C L = 1nF
C L = 1nF, C U = 0nF
600
600
400
C U = C L = 2nF
400
200
0
C U = C L = 1nF
200
0
C U = 1nF, C L = 0nF
0
500
1000
1500
0
500
1000
1500
2000
FREQUENCY (kHz)
FIGURE 2. POWER DISSIPATION vs FREQUENCY
1200
PVCC = VCC = 12V
1000
1200
1000
FREQUENCY (kHz)
FIGURE 3. 1nF LOADING PROFILE
PVCC = VCC = 12V
800
C U = C L = 3nF
800
500kHz
600
400
C U = 3nF, C L = 0nF
C L = 3nF, C U = 0nF
600
400
200kHz
100kHz
200
0
200
0
30kHz
10kHz
0
500
1000
1500
1
2
3
4
5
800
FREQUENCY (kHz)
FIGURE 4. 3nF LOADING PROFILE
350
GATE CAPACITANCE (C U = C L ), (nF)
FIGURE 5. POWER DISSIPATION vs LOADING
700
600
500
PVCC = 5V, VCC = 12V
C U = C L = 3nF
C U = C L = 5nF
C U = C L = 4nF
300
250
200
PVCC = 5V, VCC = 12V
C U = C L = 1nF
C L = 1nF, C U = 0nF
400
150
300
C U = 1nF, C L = 0nF
200
100
C U = C L =1nF
C U = C L = 2nF
100
50
0
0
500
1000
1500
2000
0
0
500
1000
1500
2000
FREQUENCY (kHz)
FIGURE 6. POWER DISSIPATION vs FREQUENCY, PVCC = 5V
9
FREQUENCY (kHz)
FIGURE 7. POWER DISSIPATION vs FREQUENCY, PVCC = 5V
FN9076.5
July 22, 2005
相关PDF资料
PDF描述
MBR1540CT DIODE SCHOTTKY 15A 40V TO220-3
ECC17DJCN-S1136 CONN EDGECARD 34PS .100 PRESSFIT
396-056-540-201 CARD EDGE 56POS DL .125X.250 BLK
396-056-526-804 CARD EDGE 56POS DL .125X.250 BLK
R0.25D-1224/HP-R CONV DC/DC 0.25W 12VIN +/-24VOUT
相关代理商/技术参数
参数描述
HIP6602BCRZA-T 功能描述:功率驱动器IC W/ANL DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP6602BCRZ-T 功能描述:功率驱动器IC DL CH SYNCHCT BUCK MOSF DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP6602CB 制造商:Rochester Electronics LLC 功能描述:- Bulk
HIP6602CB-T 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel
HIP6603 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Synchronous-Rectified Buck MOSFET Drivers