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| 型号： | HIP6603BCBZ-T |
| 厂商： | Intersil |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 电流 - 峰： | 400mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 15V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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HIP6601B, HIP6603B, HIP6604B
May 1, 2012 FN9072.8
Synchronous Rectified Buck
MOSFET Drivers
The HIP6601B, HIP6603B and HIP6604B are high-frequency,
dual MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous rectified buck converter
topology. These drivers combined with a HIP63xx or the ISL65xx
series of Multi-Phase Buck PWM controllers and MOSFETs form
a complete core-voltage regulator solution for advanced
microprocessors.
The HIP6601B drives the lower gate in a synchronous rectifier to
12V, while the upper gate can be independently driven over a range
from 5V to 12V. The HIP6603B drives both upper and lower gates
over a range of 5V to 12V. This drive-voltage flexibility provides
the advantage of optimizing applications involving trade-offs
between switching losses and conduction losses. The HIP6604B
can be configured as either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and HIP6604B
have the capacity to efficiently switch power MOSFETs at
frequencies up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and 50ns transition
time. These products implement bootstrapping on the upper gate
with only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both MOSFETs
from conducting simultaneously.
Features
? Drives Two N-Channel MOSFETs
? Adaptive Shoot-Through Protection
? Internal Bootstrap Device
? Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
? Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages
? Dual Gate-Drive Voltages for Optimal Efficiency
? Three-State Input for Output Stage Shutdown
? Supply Undervoltage Protection
? QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No
Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
? Pb-Free (RoHS Compliant)
Applications
? Core Voltage Supplies for Intel Pentium? III, AMD? Athlon?
Microprocessors
? High Frequency Low Profile DC/DC Converters
? High Current Low Voltage DC/DC Converters
Related Literature
? Technical Brief TB363 , Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices (SMDs)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright ? Intersil Americas Inc. 2002-2005, 2012. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP6603BECB | 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6603BECB-T | 功能描述:IC DRIVER MOSF SYNC BUCK 8EPSOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| HIP6603BECBZ | 功能描述:功率驱动器IC SYNCHRONUSCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6603BECBZ-T | 功能描述:功率驱动器IC SYNCCTIFIED BUCK MSFT DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP6603CB | 制造商:Rochester Electronics LLC 功能描述:SYNCHRONUS-FET DRIVER,12V/5V DRIVE - Bulk |
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