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参数资料
| 型号： | HJ112 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 3/4页 |
| 文件大小： | 42K |
| 代理商： | HJ112 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6030
Issued Date : 1998.07.01
Revised Date : 2002.08.13
Page No. : 3/4
HJ112
HSMC Product Specification
ON Voltage & Collcetor Current
100
1000
10000
100
1000
10000
Collector Current I
C
(mA)
O
V
BE(ON)
@ V
CE
=3V
25
o
C
75
o
C
125
o
C
Switching Time & Collector Current
0.1
1
10
1
10
Collector Current (A)
S
V
CC
=30V, I
C
=250I
B1
=-250I
B2
Tstg
Tf
Ton
Capacitance & Reverse-Biased Voltage
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
C
Cob
Safe Operating Area
1
10
100
1000
10000
1
10
Forward Voltage (V)
100
1000
C
P
T
=1ms
P
T
=100ms
P
T
=1s
PD - Tc
0
5
10
15
20
25
0
50
100
150
200
Temperature-Tc (
o
C)
P
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