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参数资料
| 型号： | HJ350 |
| 厂商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 23K |
| 代理商： | HJ350 |
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6008
Issued Date : 1996.04.12
Revised Date : 2002.04.18
Page No. : 1/3
HJ350
HSMC Product Specification
HJ350
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ350 is designed for line operated audio output amplifier,
switch mode power supply drivers and other switching applications.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 15 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -300 V
BVCEO Collector to Emitter Voltage................................................................................. -300 V
BVEBO Emitter to Base Voltage........................................................................................... -3 V
IC Collector Current....................................................................................................... -500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*hFE
Min.
-300
-300
-3
-
-
30
Typ.
-
Max.
-
-
-
-100
-100
240
Unit
V
V
V
uA
uA
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-0.1mA, IC=0
VCB=-300V, IE=0
VEB=-3V, IC=0
VCE=-10V, IC=-50mA
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
-
-
-
TO-252
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