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参数资料
| 型号： | HL8341MG |
| 厂商： | OPNEXT INC |
| 元件分类： | 激光器 |
| 英文描述： | 852 nm, LASER DIODE |
| 文件页数： | 1/4页 |
| 文件大小： | 65K |
| 代理商： | HL8341MG |
Rev.0 Aug. 01, 2008 page 1 of 4
HL8340MG/41MG
GaAlAs Laser Diode
ODE2056-00 (M)
Rev.0
Aug. 01, 2008
Description
The HL8340MG/41MG are 0.85
μm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for sensor applications and various other types of optical equipment.
Features
Infrared light output: λp = 852 nm Typ
Optical output power: 50 mW (CW)
Low operating current: 75 mA Typ
Low operating voltage: 1.9 V Typ
Built-in monitor photodiode
Single longitudinal mode
LD
PD
1
3
Internal Circuit
HL8340MG
Package Type
HL8340MG/41MG: MG
2
LD
PD
1
3
Internal Circuit
HL8341MG
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Symbol
Ratings
Unit
Optical output power
PO
50
mW
LD reverse voltage
VR(LD)
2
V
PD reverse voltage
VR(PD)
30
V
Operating temperature
Topr
–10 to +60
°C
Storage temperature
Tstg
–40 to +85
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Threshold current
Ith
—
20
40
mA
—
Slope efficiency
ηs
0.7
0.9
—
mW/mA
30 (mW)/(I(40mW) – I(10mW))
Operating current
IOP
—
75
100
mA
PO = 50 mW
Operating voltage
VOP
—
1.9
2.0
V
PO = 50 mW
Beam divergence
parallel to the junction
θ//
6
9
12
°
PO = 50 mW, FWHM
Beam divergence
perpendicular to the junction
θ⊥
18
22
26
°
PO = 50 mW, FWHM
Lasing wavelength
λp
842
852
862
nm
PO = 50 mW
Monitor current
IS
—
0.25
—
mA
PO = 50 mW, VR(PD) = 5 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HL8341MG-A | 制造商:Opnext 功能描述:WAVLNGTH 852+/-10NM OPTCL OUTPT PWR 50 - Rail/Tube |
| HL8342MG | 制造商:OPNEXT 制造商全称:OPNEXT 功能描述:GaAlAs Laser Diode |
| HL8342MG-A | 制造商:Opnext 功能描述:WAVLNGTH 852+/-4NM OPTCL OUTPT PWR 50 - Rail/Tube |
| HL8343MG | 制造商:OPNEXT 制造商全称:OPNEXT 功能描述:GaAlAs Laser Diode |
| HL8343MG-A | 制造商:Opnext 功能描述:WAVLNGTH 852+/-4NM OPTCL OUTPT PWR 50 - Rail/Tube |
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