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参数资料
| 型号： | HLB121D |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN Triple Diffused Planar Type High Voltage Transistor |
| 中文描述： | npn型三重扩散平面型高压晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 51K |
| 代理商： | HLB121D |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB121D
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HD200205
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 1/4
HLB121D
HSMC Product Specification
Description
The HLB121D is a medium power transistor designed for use in switching
applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 10 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC) ............................................................................................................................... 300 mA
I
C
Collector Current (Pulse)............................................................................................................................ 600 mA
I
B
Base Current (DC)........................................................................................................................................ 40 mA
I
B
Base Current (Pulse).................................................................................................................................. 100 mA
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
Min.
600
400
6
-
-
-
-
-
-
8
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
750
1
-
36
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=550V
V
CB
=400V
V
EB
=6V
I
C
=50mA, I
B
=10mA
I
C
=100mA, I
B
=20mA
I
C
=50mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
TO-126ML
相关PDF资料 |
PDF描述 |
|---|---|
| HLB121J | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122D | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122I | NPN Triple Diffused Planar Type High Voltage Transistors |
| HLB122J | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122T | NPN Triple Diffused Planar Type High Voltage Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HLB121I | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR |
| HLB121J | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR |
| HLB122D | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122I | 制造商:HSMC 制造商全称:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistors |
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