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参数资料
| 型号： | HM62-37154R7MLFTR |
| 厂商： | BI TECHNOLOGIES CORP |
| 元件分类： | 通用定值电感 |
| 英文描述： | 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD |
| 封装： | ROHS COMPLIANT |
| 文件页数： | 1/8页 |
| 文件大小： | 1153K |
| 代理商： | HM62-37154R7MLFTR |
2009/10 EDITION MAGNETIC COMPONENTS SELECTOR GUIDE
We reserve the right to change specifications without prior notice.
www.bitechnologies.com
51
HM62-26101R0NLF
1.0
± 30%
0.092
1.40
1.77
1.55
A
5,000
50,000
HM62-26102R2MLF
2.2
± 20%
0.179
1.00
1.30
1.28
D
5,000
50,000
HM62-26103R3MLF
3.3
± 20%
0.219
0.85
1.10
0.98
F
5,000
50,000
HM62-26104R7MLF
4.7
± 20%
0.282
0.70
0.95
0.86
H
5,000
50,000
HM62-26106R8MLF
6.8
± 20%
0.453
0.61
0.75
0.73
J
5,000
50,000
HM62-2610100MLF
10
± 20%
0.667
0.45
0.58
0.52
L
5,000
50,000
HM62-2610150MLF
15
± 20%
0.857
0.40
0.50
0.43
N
5,000
50,000
HM62-2610220MLF
22
± 20%
1.511
0.33
0.38
0.32
O
5,000
50,000
Specifications @ 25°C / Packaging
Inductance
Heating(3)
Carton
100kHz, 0.1Vrms
DCR
Irated(1)
Isat(2)
Current
13” Reel
Box
Part
@ 0 Adc
(Adc)
Marking
Qty
Number
H
Tolerance
± 20%
Max.
Code
(Units)
Notes: (1) The rated current (Irated) is the current at which the inductance will be decreased by 10% from its initial (zero DC) value.
(2) The saturation current (Isat) is the current at which the inductance rolls off approximately 30% from its initial (zero DC) value.
(3) The heating current is the DC current which causes the inductor temperature to increase by approximately 40°C.
Electrical / Environmental
OperatingTemperatureRange
-40°Cto+85°C
OperatingFrequency
Upto3MHz
SurfaceMountPowerInductors
HM62-2610
Outline Dimensions (mm)
Recommended Solder Pad Layout
Top View
Bottom View
Packaging
A
B
C
D
E
F
G
H
I
J
2.80 ± 0.20
1.00 Max.
3.82 Max.
1.15 Ref.
0.50 Ref.
0.80 Ref.
1.2
1.0
2.60 ± 0.20
Schematic
RoHS
Compliant
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HM62-37156R8MLFTR | 功能描述:POWER INDUCTORS RoHS:是 类别:电感器，线圈，扼流圈 >> 固定式 系列:HM62 标准包装:500 系列:1331 电感:1.2µH 电流:247mA 电流 - 饱和:247mA 电流 - 温升:- 类型:铁芯体 容差:±10% 屏蔽:屏蔽 DC 电阻(DCR):最大 730 毫欧 Q因子@频率:40 @ 7.9MHz 频率 - 自谐振:130MHz 材料 - 芯体:铁 封装/外壳:0.312" L x 0.115" W x 0.135" H（7.94mm x 2.92mm x 3.43mm） 安装类型:表面贴装 包装:带卷 (TR) 工作温度:-55°C ~ 105°C 频率 - 测试:7.9MHz |
| HM624100H | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:4M High Speed SRAM (1-Mword x 4-bit) |
| HM624100HC | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:4M High Speed SRAM (1-Mword x 4-bit) |
| HM624100HCJP-10 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:4M High Speed SRAM (1-Mword x 4-bit) |
| HM624100HCJP-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM: Notes on Usage Technical Update/Device |
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