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参数资料
| 型号： | HMBTH10 |
| 厂商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 29K |
| 代理商： | HMBTH10 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTH10
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HN200101
Issued Date : 2000.02.01
Revised Date : 2002.10.25
Page No. : 1/3
HMBTH10
HSMC Product Specification
Description
The HMBTH10 is designed for use in VHF & UHF oscillators and VHF
mixer in tuner of a TV receiver.
Features
High frequency
Very low capacitance
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 20 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage.............................................................................................. 3 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE
Cob
fT
Min.
20
15
3
-
-
-
-
60
-
650
Typ.
-
-
-
-
-
-
-
-
1.5
-
Max.
-
-
-
100
100
500
0.95
-
-
-
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=100uA
IC=1mA
IC=10uA
VCB=20V
VEB=2V
IC=4mA, IB=0.4mA
VCE=10V, IC=4mA
VCE=10V, IC=4mA
VCB=10V, f=1MHz
VCB=10V, IC=4mA, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
pF
MHz
SOT-23
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