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参数资料
| 型号： | HMC-APH634 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 81000 MHz - 86000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2.57 X 1.70 MM, 0.05 MM HEIGHT, PLASTIC, GP-1, 6 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 181K |
| 代理商： | HMC-APH634 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 81 - 86 GHz
v00.0110
General Description
Features
Functional Diagram
High Gain: 12 dB
High P1dB: +19 dBm
Bias Supply: +4V
50 Ohm Matched Input/Output
Die Size: 2.57 x 1.70 x 0.05 mm
Electrical Specifications
, T
A = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240mA
[2]
Typical Applications
This HMC-APH634 is ideal for:
Short Haul / High Capacity Links
Wireless LAN Bridges
Military & Space
E-Band Communication Systems
The HMC-APH634 is a two stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
81 and 86 GHz. The HMC-APH634 provides 12
dB of gain, and an output power of up to +20 dBm
at 1 dB compression from a +4V supply. All bond
pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH634 GaAs HEMT MMIC
Medium Power Amplifier is compatible with conven-
tional die attach methods, as well as thermocomp-
ression and thermosonic wire bonding, making it
ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in
a 50 Ohm environment and contacted with RF probes.
HMC-APH634
Parameter
Min.
Typ.
Max.
Units
Frequency Range
81 - 86
GHz
Gain
7
12
dB
Input Return Loss
7dB
Output Return Loss
8dB
Output power for 1dB Compression (P1dB)
19
dBm
Supply Current (Idd1+Idd2)
240
mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1=Vgg2 between -0.8V to +0.3V (typ. -0.1V) to achieve Idd
total = 240mA
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