参数资料
型号: HMC-AUH312
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: 500 MHz - 65000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 1.20 X 1.00 MM, 0.10 MM HEIGHT, DIE-5
文件页数: 1/8页
文件大小: 226K
代理商: HMC-AUH312
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, 0.5 - 65 GHz
v03.0209
General Description
Features
Functional Diagram
Small Signal Gain: >8 dB
65 GHz Distributed Amplifier
Can be configured with and
w/o Bias-Tees for Vd and Vg1 bias
Low Power Dissipation:
300 mW with Bias Tee @ Vdd = 5V
360 mW w/o Bias Tee @ Vdd = 6V
480 mW w/o Bias Tee @ Vdd = 8V
Small Die Size: 1.2 x 1.0 x 0.1 mm
Electrical Specifications
, T
A = +25° C, Vdd= +8V *
Typical Applications
This HMC-AUH312 is ideal for:
Fiber Optic Modulator Driver
Fiber Optic Photoreceiver Post Amplifier
Gain Block for Test & Measurement Equipment
Point-to-Point/Point-to-Multi-Point Radio
Wideband Communication & Surveillance Systems
Radar Warning Receivers
The HMC-AUH312 is a GaAs MMIC HEMT Distrib-
uted Driver Amplifier die which operates between
500 MHz and 65 GHz and provides a typical 3
dB bandwidth in excess of 65 GHz. The amplifier
provides 10 dB of small signal gain and a maximum
output amplitude of 2.5V peak to peak, which makes it
ideal for use in broadband wireless, fiber optic commu-
nication and test equipment applications. The amplifier
die occupies 1.2 mm2 which facilitates easy integration
into Multi-Chip-Modules (MCMs). The HMC-AUH312
can be used with or without a bias-tee and requires
off-chip blocking components and bypass capacitors
for the DC supply lines. Adjustable gate voltages allow
for gain adjustment.
Parameter
Min.
Typ.
Max.
Units
Frequency Range
0.5 - 65
GHz
Gain
8
10
dB
Input Return Loss
12
dB
Output Return Loss
15
dB
Supply Current (Idd) (Vdd= 8V)
60
mA
*Unless otherwise indicated, all measurements are from probed die
HMC-AUH312
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