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参数资料
| 型号： | HMC-AUH317 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 81000 MHz - 86000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.65 X 1.60 MM, 0.05 MM HEIGHT, DIE-6 |
| 文件页数： | 6/6页 |
| 文件大小： | 473K |
| 代理商： | HMC-AUH317 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see hmC general handling, mounting, Bonding note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing rf to and from the chip
(figure 1).
microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either waffle or Gel based esD pro-
tective containers, and then sealed in an esD protective bag for shipment.
once the sealed esD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning
systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do
noT expose the chip to a temperature greater than 320 °C for more than 20 seconds. no more than 3 seconds of
scrubbing should be required for attachment.
epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
rf bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
0.05mm (0.002”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
HMC-AUH317
v04.0511
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 81 - 86 GHz
相关PDF资料 |
PDF描述 |
|---|---|
| HMC-AUH320 | 71000 MHz - 86000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-C002 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| HMC-C003 | 2000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-C004 | 10 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| HMC-C007 | 500 MHz - 18000 MHz RF/MICROWAVE SPLITTER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC-AUH317_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz |
| HMC-AUH318 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz |
| HMC-AUH318_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz |
| HMC-AUH320 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:ACTIVE BIAS CONTROLLER |
| HMCBAT01 | 制造商:Omron Corporation 功能描述: |
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