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参数资料
| 型号： | HMC-AUH320 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 71000 MHz - 86000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 2.20 X 0.87 MM, 0.10 MM HEIGHT, DIE-5 |
| 文件页数： | 3/6页 |
| 文件大小： | 201K |
| 代理商： | HMC-AUH320 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH320
v03.0209
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 86 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
Drain Bias Voltage
+4.5 Vdc
Gate Bias Voltage
-0.8 to +0.3 Vdc
Thermal Resistance
(Channel to die bottom)
92.1 °C/W
Channel Temperature
180 °C
Storage Temperature
-65 °C to +150 °C
Operating Temperature
-55 °C to +85 °C
Drain Bias Current (Idd1)
50 mA
Drain Bias Current (Idd2)
100 mA
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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