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参数资料
| 型号： | HMC136 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 调制器/解调器 |
| 英文描述： | 4000 MHz - 8000 MHz RF/MICROWAVE BIPHASE MODULATOR |
| 封装： | 1.40 X 1.40 MM, 0.10 MM HEIGHT, DIE-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 444K |
| 代理商： | HMC136 |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC136
GaAs MMIC BI-PHASE
MODULATOR, 4 - 8 GHz
v03.0909
General Description
Features
Functional Diagram
Chip Integrates Directly into MIC Designs
Carrier Suppression: 30 dB
Direct Modulation in the 4 - 8 GHz Band
Functions also as a Phase Detector
Die Size: 1.40 x 1.40 x 0.1 mm
Electrical Specifications, T
A = +25° C, 5 mA Bias Current
Typical Applications
The HMC136 is suitable for:
Wireless Local Loop
LMDS & VSAT
Point-to-Point Radios
Test Equipment
The HMC136 Bi-Phase Modulator is designed to
phase-modulate an RF signal into reference and 180
degree states. Device input is at the RF port and out-
put is at the LO port. The polarity of the bias current at
the control port (IF port) defines the phase states.
Excellent amplitude and phase balance provided
by closely matched monolithic balun and diode
circuits delivers 30 dB of carrier suppression in a tiny
monolithic chip.
The device also functions as a demodulator or phase
comparator. As a demodulator, data emerges at the
control port when a modulated signal at the RF port
is compared to a reference signal at the LO port.
As a phase comparator, the phase angle between
two signals applied to the RF and LO ports is
represented by an analog voltage at the control port.
Except for carrier suppression, the data presented
here was measured under static conditions in which
a DC bias current (nominally 5 mA) is applied to the
control port.
Parameter
Min.
Typ.
Max.
Units
Frequency Band
4 - 8
GHz
Insertion Loss
810
dB
Return Loss, RF and LO Ports
2.5
3.0
dB
Amplitude Balance
0.1
0.5
dB
Phase Balance
4.0
6.0
deg
Carrier Supression (When driven with a 1 MHz square wave, 1.4 Vp-p)
25
30
dBc
Input Power for 1 dB Compression
4
8
dBm
Third Order Intercept, Input
10
15
dBm
Second Order Intercept, Input
25
35
dBm
Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V
at the control port).
25
10
mA
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相关代理商/技术参数 |
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| HMC136_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
| HMC136_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 4 - 8 GHz |
| HMC137 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz |
| HMC137_07 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz |
| HMC137_09 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz |
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