参数资料
型号: HMC151
厂商: HITTITE MICROWAVE CORP
元件分类: 放大器
英文描述: RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
文件页数: 4/4页
文件大小: 123K
代理商: HMC151
1 - 5
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
MICROWAVE CORPORATION
SEPTEMBER 1999
Amplifiers
1
State
Function
Bias Condition
1
Gain Enable
+2.5V +/- 0.1V
@ 1mA Max.
0
Gain Disable
-1V to -5V
@ 1mA Max.
Control Voltages
Absolute Maximum Ratings
Outline
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V
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x
a
M
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d
V
0
.
7
+
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Cc
d
V
0
.
5
-
o
t
5
.
2
+
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p
m
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T
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g
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t
SC
g
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d
0
5
1
+
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5
6
-
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r
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t
a
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p
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T
g
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i
t
a
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e
p
OC
g
e
d
5
2
1
+
o
t
5
-
RF OUT
(50 OHMS)
RF IN
(50 OHMS)
VDD
+5V
GROUND
A5
A4
A3
A2
A1(LSB)
GAIN CONTROL WORD
(BACKSIDE)
Schematic
HMC151 VARIABLE GAIN AMPLIFIER 1 - 4 GHz
ALL DIMENSIONS IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ± 0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004), BACKSIDE IS GROUND
BONDPADS ARE 0.100 (0.004) SQUARE,
EQUALLY SPACED AT 0.150 (0.006) CENTERS
BONDPAD METALLIZATION: GOLD
BACKSIDE METALLIZATION: GOLD
(0.0050)
(0.0631)
3724
Hittite
IN
A5
A4
VDD
OUT
A3
A2
A1
1.604
0.127
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