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参数资料
| 型号： | HMC158 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 倍频器 |
| 英文描述： | 1300 MHz - 4000 MHz RF/MICROWAVE FREQUENCY DOUBLER, 18 dB CONVERSION LOSS-MAX |
| 封装： | 1.15 X 1 MM, 0.10 MM HEIGHT, MINIATURE, SMT, DIE-2 |
| 文件页数： | 4/4页 |
| 文件大小： | 347K |
| 代理商： | HMC158 |
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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC158
v06.0711
GaAs MMIC PASSIVE FREQUENCY
DOUBLER CHIP, 1.3 - 4.0 GHz INPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD
protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning
systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and
terminated on the package. RF bonds should be as short as possible.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC158_11 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC PASSIVE FREQUENCY DOUBLER CHIP, 1.3 - 4.0 GHz INPUT |
| HMC158C8 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.3 - 4.0 GHz INPUT |
| HMC158C8_06 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.3 - 4.0 GHz INPUT |
| HMC158C8_08 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, 1.3 - 4.0 GHz INPUT |
| HMC158C8TR | 功能描述:RF IC Doubler VSAT, DBS 1.3GHz ~ 4GHz 8-SMT 制造商:analog devices inc. 系列:- 包装:剪切带（CT） 零件状态:过期 功能:倍增器 频率:1.3GHz ~ 4GHz RF 类型:VSAT，DBS 辅助属性:- 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SMT 标准包装:1 |
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