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参数资料
| 型号： | HMC194MS8TR |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 开关 |
| 英文描述： | 0 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.1 dB INSERTION LOSS |
| 封装： | ULTRA SMALL, PLASTIC, SMT, MSOP-8 |
| 文件页数： | 1/7页 |
| 文件大小： | 267K |
| 代理商： | HMC194MS8TR |
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC194MS8 / 194MS8E
GaAs MMIC SPDT SWITCH
DC - 3 GHz
v06.0608
General Description
Features
Functional Diagram
Ultra Small Package: MSOP8
High Isolation: 50 dB
Positive Control: 0/+3V to 0/+7V
Electrical Specifications, T
A = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System
Typical Applications
The HMC194MS8 /HMC194MS8E is ideal for:
Cellular/PCS Base Stations
Portable Wireless
MMDS & WirelessLAN
The HMC194MS8 & HMC194MS8E are low-cost
SPDT switches in 8-lead MSOP packages for use in
applications which require high isolation between two
RF paths. The devices can control signals from DC to
3 GHz and have been optimized to provide extremely
high isolation with minimal insertion loss in medium
and low power applications. On chip circuitry allows
positive voltage control operation at very low DC cur-
rents with control inputs compatible with CMOS and
most TTL logic families. RF1 and RF2 are reflective
opens when “OFF”.
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.7
0.8
0.9
1.0
1.1
dB
Isolation
RF1 / RF2
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
48 / 50
40 / 42
31
24
52 / 54
44 / 46
35
28
dB
Return Loss
DC - 2.0 GHz
DC - 2.5 GHz
24
22
dB
Input Power for 1 dB Compression
0/+5V Control
0.5 - 3.0 GHz
24
28
dBm
Input Third Order Intercept
(Two-tone Input Power = +7 dBm Each Tone)
0/+5V Control
0.5 - 3.0 GHz
49
53
dBm
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
tON , tOFF (50% CTL to 10/90% RF)
10
24
ns
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