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参数资料
| 型号： | HMC239AS8E |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 开关 |
| 英文描述： | 0 MHz - 2500 MHz RF/MICROWAVE DIVERSITY SWITCH, 1 dB INSERTION LOSS |
| 封装： | ROHS COMPLIANT, PLASTIC, SMT, SOIC-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 290K |
| 代理商： | HMC239AS8E |
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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HMC239AS8 / 239AS8E
v00.0311
GaAs MMIC SPDT SWITCH
DC - 2.5 GHz
Electrical Specifications, T
A = +25 °C, Vctl = 0 / -5V, 50 Ohm System
Parameter
Frequency
Min.
typ.
Max.
Units
insertion Loss
Dc - 0.1 Ghz
Dc - 0.5 Ghz
Dc - 1.0 Ghz
Dc - 2.0 Ghz
Dc - 2.5 Ghz
0.4
0.5
0.6
0.7
0.6
0.7
0.8
1.0
dB
isolation
Dc - 0.5 Ghz
Dc - 1.0 Ghz
Dc - 2.0 Ghz
Dc - 2.5 Ghz
33
26
18
14
36
29
21
17
dB
Return Loss
Dc - 1.0 Ghz
Dc - 2.0 Ghz
Dc - 2.5 Ghz
18
17
15
21
20
dB
input Power for 1 dB compression
0 / -5V control
0.5 - 1.0 Ghz
0.5 - 2.5 Ghz
25
23
29
27
dBm
input third Order intercept
(two-tone input Power = +7 dBm each tone)
0 / -5V control
0.5 - 1.0 Ghz
0.5 - 2.5 Ghz
45
44
50
49
dBm
Switching characteristics
Dc - 2.5 Ghz
tRiSe, tFALL (10 / 90% RF)
tON, tOFF (50% ctL to 10 / 90% RF)
2
10
ns
Functional Diagram
Features
Low insertion Loss: 0.4 dB
high isolation: 35 dB
Fast Switching Speed: 2 ns
high input iP3: +50 dBm
Typical Applications
the hMc239AS8 / hMc239AS8e is ideal for:
MMDS & WirelessLAN
Basestation Infrastructure
Portable Wireless
General Description
The HMC239AS8 & HMC239AS8E are low-cost GaAs
MMic SPDt switches in 8-lead SOic packages. the
switch can control signals from Dc to 2.5 Ghz. it is
especially suited for low or medium power applica-
tions which require extremely fast switching with
minimal insertion loss. the two control voltages
require a minimal amount of Dc current which is opti-
mal for battery powered radio systems. RF1 and RF2
are reflective shorts when “Off”.
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