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参数资料
| 型号： | HMC261 |
| 厂商： | HITTITE MICROWAVE CORP |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 1.70 X 1.30 MM, DIE-4 |
| 文件页数： | 6/6页 |
| 文件大小： | 319K |
| 代理商： | HMC261 |
MICROWAVE CORPORATION
1 - 7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
AMPLIFIERS
-
CHIP
1
HMC261
v01.0500
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal
and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically con-
ductive epoxy. The mounting surface should be clean and at.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool
temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should
be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports)
0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
DISCONTINUED
PRODUCT
Not
Recommended
for New
Designs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HMC261_00 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz |
| HMC261_02 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC MEDIUM POWER DISTRIBUTED AMPLIFIER, 20 - 40 GHz |
| HMC261LM1 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz |
| HMC261LM1_01 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:SMT DISTRIBUTED GaAs MMIC AMPLIFIER, 20 - 32 GHz |
| HMC262 | 制造商:HITTITE 制造商全称:Hittite Microwave Corporation 功能描述:GaAs MMIC LOW NOISE AMPLIFIER 15 - 24 GHz |
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